Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 145ns |
| Pd - Power Dissipation | 454W |
| Td(on) | 18ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.4mA |
| Gate Charge(Qg) | 212nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 1.6mJ |
| Input Capacitance(Cies) | 4.912nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 140pF |
| Description | IGBT FS (Field Stop) 1.2kV 160A 454W Through Hole TO-247 |
| Mfr. Part # | NGTB40N120FL3WG |
| Package | TO-247 |
| Model Number | NGTB40N120FL3WG |
View Detail Information
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Product Specification
| Td(off) | 145ns | Pd - Power Dissipation | 454W |
| Td(on) | 18ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.4mA | Gate Charge(Qg) | 212nC |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.1mJ | Turn-On Energy (Eon) | 1.6mJ |
| Input Capacitance(Cies) | 4.912nF | Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 140pF | Description | IGBT FS (Field Stop) 1.2kV 160A 454W Through Hole TO-247 |
| Mfr. Part # | NGTB40N120FL3WG | Package | TO-247 |
| Model Number | NGTB40N120FL3WG |
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop Technology, a maximum junction temperature of 175C, a soft fast reverse recovery diode, and optimization for high-speed switching.
| Rating | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | VCES | 1200 | V | |
| IC (@ TC = 25C) | 80 | A | ||
| IC (@ TC = 100C) | 40 | A | ||
| ICM (Pulsed collector current, Tpulse limited by TJmax) | 160 | A | ||
| PD (@ TC = 25C) | 454 | W | ||
| OPERATING TEMPERATURE | TJ | -55 to +175 | C | |
| Tstg | -55 to +175 | C | ||
| THERMAL CHARACTERISTICS | R JC (IGBT) | 0.33 | C/W | junction-to-case |
| R JC (Diode) | 0.61 | C/W | junction-to-case | |
| R JA | 40 | C/W | junction-to-ambient | |
| ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) | V(BR)CES | 1200 | V | VGE = 0 V, IC = 500 A |
| VCEsat (@ IC = 40 A, VGE = 15 V) | 1.7 | V | ||
| VGE(th) | 4.5 - 6.5 | V | VGE = VCE, IC = 400 A | |
| ICES (@ VCE = 1200 V, VGE = 0 V) | 0.5 | mA | ||
| IGES (@ VGE = 20 V, VCE = 0 V) | 200 | nA | ||
| Cies | 4912 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Coes | 140 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Cres | 80 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz | |
| Qg | 212 | nC | VCE = 600 V, IC = 40 A, VGE = 15 V | |
| Eoff (Turn-off switching loss) | 1.1 | mJ | VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 15 V | |
| DIODE CHARACTERISTIC | VF (@ IF = 40 A) | 3.0 | V | |
| trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 86 | ns | TJ = 25C | |
| Qrr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 0.56 | C | TJ = 25C | |
| Irm (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 12 | A | TJ = 25C | |
| dIrrm/dt | -210 | A/s | ||
| trr (@ IF = 40 A, VR = 600 V, diF/dt = 500 A/s) | 136 | ns | TJ = 125C | |
| ORDERING INFORMATION | NGTB40N120FL3WG | TO-247 (Pb-Free) | 30 Units / Rail |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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