Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 104ns |
| Td(on) | 18ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 85pF |
| Input Capacitance(Cies) | 2.915nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA |
| Gate Charge(Qg) | 189nC@15V |
| Pulsed Current- Forward(Ifm) | 180A |
| Output Capacitance(Coes) | 270pF |
| Reverse Recovery Time(trr) | 47ns |
| Switching Energy(Eoff) | 450uJ |
| Turn-On Energy (Eon) | 1.54mJ |
| Description | 650V FS (Field Stop) TO-3PN Single IGBTs RoHS |
| Mfr. Part # | FGA60N65SMD |
| Package | TO-3PN |
| Model Number | FGA60N65SMD |
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Product Specification
| Td(off) | 104ns | Td(on) | 18ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Reverse Transfer Capacitance (Cres) | 85pF |
| Input Capacitance(Cies) | 2.915nF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | Gate Charge(Qg) | 189nC@15V |
| Pulsed Current- Forward(Ifm) | 180A | Output Capacitance(Coes) | 270pF |
| Reverse Recovery Time(trr) | 47ns | Switching Energy(Eoff) | 450uJ |
| Turn-On Energy (Eon) | 1.54mJ | Description | 650V FS (Field Stop) TO-3PN Single IGBTs RoHS |
| Mfr. Part # | FGA60N65SMD | Package | TO-3PN |
| Model Number | FGA60N65SMD |
The FGA60N65SMD is a 650 V, 60 A Field Stop IGBT from ON Semiconductor, leveraging advanced Field Stop IGBT technology for optimal performance in applications demanding low conduction and switching losses. It offers high current capability, a positive temperature coefficient for easy paralleling, and low saturation voltage. This device is designed for demanding applications such as photovoltaic inverters, UPS, welding machines, PFC, and communication power supplies.
| Part Number | Description | VCES (V) | VGES (V) | IC @ TC=25C (A) | IC @ TC=100C (A) | ICM (A) | PD @ TC=25C (W) | TJ (C) | Package |
| FGA60N65SMD | 650 V, 60 A Field Stop IGBT | 650 | ±20 | 120 | 60 | 180 | 600 | -55 to +175 | TO-3PN |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| IGBT Electrical Characteristics | ||||||
| BVCES | Collector-Emitter Breakdown Voltage | VGE = 0 V, IC = 250 μA | 650 | V | ||
| ICES | Collector Cut-off Current | VCE = VCES, VGE = 0 V | 250 | μA | ||
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | ±400 | nA | ||
| VGE(th) | G-E Threshold Voltage | IC = 250 μA, VCE = VGE | 3.5 | 4.5 | 6.0 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 60 A, VGE = 15 V | 1.9 | 2.5 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 60 A, VGE = 15 V, TC = 175°C | 2.1 | V | ||
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 2915 | pF | ||
| Coes | Output Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 270 | pF | ||
| Cres | Reverse Transfer Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 85 | pF | ||
| td(on) | Turn-on Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 18 | 27 | ns | |
| tr | Rise Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 47 | 70 | ns | |
| td(off) | Turn-off Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 104 | 146 | ns | |
| tf | Fall Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 50 | 68 | ns | |
| Eon | Turn-on Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 1.54 | 2.31 | mJ | |
| Eoff | Turn-off Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 0.45 | 0.60 | mJ | |
| Ets | Total Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | 1.99 | 2.91 | mJ | |
| td(on) | Turn-on Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 18 | ns | ||
| tr | Rise Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 41 | ns | ||
| td(off) | Turn-off Delay Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 115 | ns | ||
| tf | Fall Time | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 48 | ns | ||
| Eon | Turn-on Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 2.08 | mJ | ||
| Eoff | Turn-off Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 0.78 | mJ | ||
| Ets | Total Switching Loss | VCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | 2.86 | mJ | ||
| Qg | Total Gate Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 189 | 284 | nC | |
| Qge | Gate-Emitter Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 20 | 30 | nC | |
| Qgc | Gate-Collector Charge | VCE = 400 V, IC = 60 A, VGE = 15 V | 91 | 137 | nC | |
| Diode Electrical Characteristics | ||||||
| VFM | Diode Forward Voltage | IF = 30 A, TC = 25°C | 2.1 | 2.6 | V | |
| VFM | Diode Forward Voltage | IF = 30 A, TC = 175°C | 1.7 | V | ||
| Erec | Reverse Recovery Energy | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 127 | μJ | ||
| trr | Diode Reverse Recovery Time | IF =30 A, dIF/dt = 100 A/μs, TC = 25°C | 47 | ns | ||
| trr | Diode Reverse Recovery Time | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 212 | ns | ||
| Qrr | Diode Reverse Recovery Charge | IF =30 A, dIF/dt = 100 A/μs, TC = 25°C | 87 | nC | ||
| Qrr | Diode Reverse Recovery Charge | IF =30 A, dIF/dt = 200 A/μs, TC = 175°C | 933 | nC | ||
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Junction-to-Case Thermal Resistance | 0.25 | °C/W | |||
| RθJC(Diode) | Junction-to-Case Thermal Resistance | 1.1 | °C/W | |||
| RθJA | Junction-to-Ambient Thermal Resistance | 40 | °C/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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