| Td(off) | 200ns |
| Pd - Power Dissipation | 417W |
| Td(on) | 85ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Gate Charge(Qg) | 250nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Input Capacitance(Cies) | 6.4nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 180pF |
| Description | IGBT 1.2kV 40A Through Hole TO-247 |
| Mfr. Part # | YGW40N120F2 |
| Package | TO-247 |
| Model Number | YGW40N120F2 |
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Product Specification
| Td(off) | 200ns | Pd - Power Dissipation | 417W |
| Td(on) | 85ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Gate Charge(Qg) | 250nC@15V | Operating Temperature | -40℃~+150℃ |
| Reverse Recovery Time(trr) | 190ns | Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 4.3mJ | Input Capacitance(Cies) | 6.4nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 180pF |
| Description | IGBT 1.2kV 40A Through Hole TO-247 | Mfr. Part # | YGW40N120F2 |
| Package | TO-247 | Model Number | YGW40N120F2 |
The YGW40N120F2 is a high-performance Trench Field Stop IGBT with a breakdown voltage of 1200V and a continuous collector current of 40A. It features high-speed switching, ruggedness, and easy parallel switching capability due to its positive temperature coefficient in VCEsat. This IGBT is designed for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | - |
| DC Collector Current | IC | 80 / 40 | A | TC = 25C / 100C |
| Diode Forward Current | IF | 80 / 40 | A | TC = 25C / 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | - |
| Pulsed Collector Current | ICM | 160 | A | VGE = 15V, tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power Dissipation | Ptot | 417 | W | Tj=25C |
| Max. Junction Temperature | TJmax | 175 | C | Under switching conditions |
| Operating Junction Temperature | TJop | -40...+150 | C | - |
| Storage Temperature | Ts | -55...+150 | C | - |
| IGBT Thermal Resistance (junction-case) | R(j-c) | 0.3 | K/W | - |
| Diode Thermal Resistance (junction-case) | R(j-c) | 0.6 | K/W | - |
| Thermal Resistance (junction-ambient) | R(j-a) | 40 | K/W | - |
| Gate Threshold Voltage | VGE(th) | 5.2 / 5.9 / 6.5 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 / 2.3 | V | VGE=15V, IC=40A, Tj = 25C / 150C |
| Zero Gate Voltage Collector Current | ICES | 250 / 2500 | A | VCE = 1200V, VGE = 0V, Tj = 25C / 150C |
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE=20V, IC=15A |
| Input Capacitance | Cies | 6400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output Capacitance | Coes | 180 | pF | - |
| Reverse Transfer Capacitance | Cres | 90 | pF | - |
| Gate Charge | QG | 250 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short Circuit Collector Current | ICSC | 350 | A | VGE=15V, tSC10us, VCC=600V, Tjstart=25C |
| Turn-on Delay Time | td(on) | 85 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Rise Time | tr | 50 | ns | - |
| Turn-on Energy | Eon | 4.3 | mJ | - |
| Turn-off Delay Time | td(off) | 200 | ns | - |
| Fall Time | tf | 70 | ns | - |
| Turn-off Energy | Eoff | 1.2 | mJ | - |
| Diode Forward Voltage | VFM | 3.5 | V | IF = 40A, Tj = 25C |
| Reverse Recovery Time | Trr | 190 | ns | IF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 6 | A | - |
| Reverse Recovery Charge | Qrr | 530 | nC | - |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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