Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 120ns |
| Pd - Power Dissipation | 188W |
| Td(on) | 45ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 40pF |
| Input Capacitance(Cies) | 2.1nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 90nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Output Capacitance(Coes) | 100pF |
| Reverse Recovery Time(trr) | 85ns |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 2mJ |
| Description | IGBT 650V 40A Through Hole TO-247 |
| Mfr. Part # | YGW40N65F1A1 |
| Package | TO-247 |
| Model Number | YGW40N65F1A1 |
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Product Specification
| Td(off) | 120ns | Pd - Power Dissipation | 188W |
| Td(on) | 45ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 40pF | Input Capacitance(Cies) | 2.1nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Gate Charge(Qg) | 90nC@15V |
| Operating Temperature | -40℃~+175℃ | Output Capacitance(Coes) | 100pF |
| Reverse Recovery Time(trr) | 85ns | Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 2mJ | Description | IGBT 650V 40A Through Hole TO-247 |
| Mfr. Part # | YGW40N65F1A1 | Package | TO-247 |
| Model Number | YGW40N65F1A1 |
The YGW40N65F1A1 is a 650V, 40A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, Trench-Stop Technology for enhanced ruggedness and temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device also offers enhanced avalanche capability.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 |
| DC collector current | IC | 40 | A | TC = 100C |
| Diode Forward current | IF | 40 | A | TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+150 | C | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.0 / 4.9 / 5.6 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.60 | V | VGE=15V, IC=40A, Tj = 25C / Tj = 175C |
| Zero gate voltage collector current | ICES | 0.1 / 4000 | A | VCE = 650V, VGE = 0V, Tj = 25C / Tj = 175C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2100 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 100 | pF | |
| Reverse transfer capacitance | Cres | 40 | pF | |
| Gate charge | QG | 90 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20, Tj=25C |
| Rise Time | tr | 80 | ns | |
| Turn-off Delay Time | td(off) | 120 | ns | |
| Fall Time | tf | 75 | ns | |
| Turn-on Energy | Eon | 2.0 | mJ | |
| Turn-off Energy | Eoff | 0.4 | mJ | |
| Diode Forward Voltage | VFM | 1.8 / 2.4 | V | IF = 40A, Tj= 25 |
| Reverse Recovery Time | Trr | 85 | ns | IF= 40A, VR = 400V, di/dt= 500A/s, Tj= 25 |
| Reverse Recovery Current | Irr | 12 | A | |
| Reverse Recovery Charge | Qrr | 550 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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