Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 660ns |
| Pd - Power Dissipation | 500W |
| Td(on) | 110ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Input Capacitance(Cies) | 4.5nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@250uA |
| Operating Temperature | -40℃~+175℃ |
| Output Capacitance(Coes) | 200pF |
| Reverse Recovery Time(trr) | 50ns |
| Switching Energy(Eoff) | 8.4mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Description | IGBT 650V 75A Through Hole TO-247 |
| Mfr. Part # | YGW75N65T1 |
| Package | TO-247 |
| Model Number | YGW75N65T1 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 660ns | Pd - Power Dissipation | 500W |
| Td(on) | 110ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 100pF | Input Capacitance(Cies) | 4.5nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@250uA | Operating Temperature | -40℃~+175℃ |
| Output Capacitance(Coes) | 200pF | Reverse Recovery Time(trr) | 50ns |
| Switching Energy(Eoff) | 8.4mJ | Turn-On Energy (Eon) | 4.3mJ |
| Description | IGBT 650V 75A Through Hole TO-247 | Mfr. Part # | YGW75N65T1 |
| Package | TO-247 | Model Number | YGW75N65T1 |
The YGW75N65T1 is a 650V / 75A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Breakdown Voltage | VCE | VGE=0V , IC=250uA | 650 | V |
| VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.6 - 6.2 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 25C | 1.7 | V |
| VGE=15V, IC=75A, Tj = 175C | 2.5 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | 0.1 | A |
| VCE = 650V, VGE = 0V, Tj = 175C | 5000 | A | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75A | 40 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 200 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 100 | pF |
| Gate charge | QG | VCC = 480V, IC = 75A, VGE = 15V | 260 | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | 350 | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 110 | ns |
| Rise Time | tr | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 40 | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 660 | ns |
| Fall Time | tf | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 60 | ns |
| Turn-on Energy | Eon | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 4.3 | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 8.4 | mJ |
| Diode Forward Voltage | VFM | IF = 75A, Tj = 25C | 1.9 | V |
| Reverse Recovery Time | Trr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 50 | ns |
| Reverse Recovery Current | Irr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 12 | A |
| Reverse Recovery Charge | Qrr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 350 | nC |
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| DC collector current | IC | TC = 25C | 150 | A |
| DC collector current | IC | TC = 100C | 75 | A |
| Diode Forward current | IF | TC = 25C | 150 | A |
| Diode Forward current | IF | TC = 100C | 75 | A |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Power dissipation | Ptot | Tj=25C | 500 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+175 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!