| Description | Single IGBTs RoHS |
| Mfr. Part # | MIP50R12E1ATN-BP |
| Model Number | MIP50R12E1ATN-BP |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | MIP50R12E1ATN-BP |
| Model Number | MIP50R12E1ATN-BP |
The MIP50R12E1ATN is an IGBT module designed for high-performance applications such as motor drivers, AC/DC servo drive amplifiers, and UPS systems. It offers low switching losses, low Vce(sat) with a positive temperature coefficient, and a fast/soft recovery anti-parallel FWD. The module features a low inductance case, high short circuit capability (10s), a maximum junction temperature of 175, and meets UL 94 V-0 flammability rating. It is Lead Free Finish/RoHS Compliant.
| Parameter | Symbol | Unit | Test Conditions | Min | Typ | Max |
| IGBT - Inverter | ||||||
| Collector-Emitter Voltage | VCES | V | 1200 | |||
| Continuous Collector Current | IC | A | TC=100, Tvjmax=175 | 50 | ||
| Repetitive Peak Collector Current | ICRM | A | tp=1ms | 100 | ||
| Gate-Emitter Voltage | VGES | V | -20 | +20 | ||
| Total Power Dissipation | Ptot | W | TC=25, Tvjmax=175 | 288 | ||
| Gate-Emitter Threshold Voltage | VGE(th) | V | VGE=VCE, IC=1.7mA,Tvj=25 | 5.2 | 5.8 | 6.4 |
| Collector-Emitter Cut-off Current | ICES | mA | VCE=1200V,VGE=0V, Tvj=25 | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=50A,VGE=15V, Tvj=25 | 1.9 | ||
| IC=50A,VGE=15V, Tvj=125 | 2.2 | |||||
| IC=50A,VGE=15V, Tvj=150 | 2.32 | |||||
| Gate Charge | Qg | C | VCE=600V, IC=50A, VGE= 15V, RG=20, Tvj=25 | 0.35 | ||
| Input Capacitance | Cies | nF | VCE=25V,VGE=0V,f=1MHz,Tvj=25 | 2.6 | ||
| Reverse Transfer Capacitance | Cres | nF | 0.1 | |||
| Gate-Emitter leakage current | IGES | nA | VCE=0V, VGE=20V, Tvj=25 | 400 | ||
| Turn-On Delay Time | td(on) | ns | VCE=600V, IC=50A, VGE= 15V, RG=20, Tvj=25 | 41 | ||
| Rise Time | tr | ns | 48 | |||
| Turn-Off Delay Time | td(off) | ns | 160 | |||
| Fall Time | tf | ns | 244 | |||
| TurnOn Energy | Eon | mJ | 5.92 | |||
| TurnOff Energy | Eoff | mJ | 3.39 | |||
| Turn-On Delay Time | td(on) | ns | VCE=600V, IC=50A, VGE= 15V, RG=20, Tvj=150 | 45 | ||
| Rise Time | tr | ns | 50 | |||
| Turn-Off Delay Time | td(off) | ns | 169 | |||
| Fall Time | tf | ns | 302 | |||
| TurnOn Energy | Eon | mJ | 6.87 | |||
| TurnOff Energy | Eoff | mJ | 3.73 | |||
| Diode - Inverter | ||||||
| Repetitive Peak Reverse Voltage | VRRM | V | 1200 | |||
| Continuous DC Forward Current | IF | A | TC=25, Tvjmax=175 | 50 | ||
| Repetitive Peak Forward Current | IFRM | A | tp=1ms | 100 | ||
| Forward Voltage | VF | V | IF=50A, Tvj=25 | 1.85 | ||
| IF=50A, Tvj=125 | 1.70 | |||||
| IF=50A, Tvj=150 | 1.62 | |||||
| Recovered Charge | Qrr | C | IF=50A, VR=600V, -diF/dt=1000A/s, Tvj=25 | 4.39 | ||
| Peak Reverse Recovery Current | Irr | A | 31 | |||
| Reverse Recovery Energy | Erec | mJ | 1.35 | |||
| Recovered Charge | Qrr | C | IF=50A, VR=600V, -diF/dt=1000A/s, Tvj=150 | 6.65 | ||
| Peak Reverse Recovery Current | Irr | A | 33 | |||
| Reverse Recovery Energy | Erec | mJ | 2.1 | |||
| I2t-value | I2t | A2s | VR=0,tp=10ms,Tvj=125 | 560 | ||
| VR=0,tp=10ms,Tvj=150 | 480 | |||||
| IGBT - Brake-chopper | ||||||
| Collector-Emitter Voltage | VCES | V | 1200 | |||
| Continuous Collector Current | IC | A | TC=25, Tvjmax=175 | 35 | ||
| Repetitive Peak Collector Current | ICRM | A | tp=1ms | 70 | ||
| Gate-Emitter Voltage | VGES | V | -20 | +20 | ||
| Total Power Dissipation | Ptot | W | TC=100, Tvjmax=175 | 227 | ||
| Gate-Emitter Threshold Voltage | VGE(th) | V | VGE=VCE, IC=1.4mA,Tvj=25 | 5.2 | 5.8 | 6.4 |
| Collector-Emitter Cut-off Current | ICES | mA | VCE=1200V,VGE=0V, Tvj=25 | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=35A,VGE=15V, Tvj=25 | 1.95 | ||
| IC=35A,VGE=15V, Tvj=125 | 2.15 | |||||
| IC=35A,VGE=15V, Tvj=150 | 2.25 | |||||
| Gate Charge | Qg | C | VCE=600V, IC=35A, VGE= 15V, RG=27, Tvj=25 | 0.27 | ||
| Input Capacitance | Cies | nF | VCE=25V,VGE=0V,f=1MHz,Tvj=25 | 2.00 | ||
| Reverse Transfer Capacitance | Cres | nF | 0.07 | |||
| Gate-Emitter leakage current | IGES | nA | VCE=0V, VGE=20V, Tvj=25 | 400 | ||
| Turn-On Delay Time | td(on) | ns | VCE=600V, IC=35A, VGE= 15V, RG=27, Tvj=25 | 30 | ||
| Rise Time | tr | ns | 40 | |||
| Turn-Off Delay Time | td(off) | ns | 151 | |||
| Fall Time | tf | ns | 257 | |||
| TurnOn Energy | Eon | mJ | 3.50 | |||
| TurnOff Energy | Eoff | mJ | 2.43 | |||
| Turn-On Delay Time | td(on) | ns | VCE=600V, IC=35A, VGE= 15V, RG=27, Tvj=150 | 33 | ||
| Rise Time | tr | ns | 44 | |||
| Turn-Off Delay Time | td(off) | ns | 158 | |||
| Fall Time | tf | ns | 274 | |||
| TurnOn Energy | Eon | mJ | 4.13 | |||
| TurnOff Energy | Eoff | mJ | 2.75 | |||
| Diode - Brake-chopper | ||||||
| Repetitive Peak Reverse Voltage | VRRM | V | 1200 | |||
| Continuous DC Forward Current | IF | A | TC=25, Tvjmax=175 | 15 | ||
| Repetitive Peak Forward Current | IFRM | A | tp=1ms | 30 | ||
| Forward Voltage | VF | V | IF=15A, Tvj=25 | 2 | ||
| IF=15A, Tvj=125 | 1.8 | |||||
| IF=15A, Tvj=150 | 1.7 | |||||
| Recovered Charge | Qrr | C | IF=15A, VR=600V, -diF/dt=550A/s, Tvj=25 | 1.2 | ||
| Peak Reverse Recovery Current | Irr | A | 10 | |||
| Reverse Recovery Energy | Erec | mJ | 0.35 | |||
| Recovered Charge | Qrr | C | IF=15A, VR=600V, -diF/dt=550A/s, Tvj=150 | 1.6 | ||
| Peak Reverse Recovery Current | Irr | A | 15 | |||
| Reverse Recovery Energy | Erec | mJ | 1.2 | |||
| I2t-value | I2t | A2s | VR=0,tp=10ms,Tvj=125 | 16 | ||
| VR=0,tp=10ms,Tvj=150 | 14 | |||||
| Diode - Rectifier | ||||||
| Repetitive Peak Reverse Voltage | VRRM | V | 1600 | |||
| Average On-state Current | IF(AV) | A | 50/60Hz, sine wave | 850 | ||
| Maximum RMS Current at Rectifier Output | IRMSM | A | 65 | |||
| Surge Forward Current | IFSM | A | TC=100 | 110 | ||
| I2t-value | I2t | A2s | VR=0,tp=10ms,Tj=45 | 3610 | ||
| Diode Forward Voltage | VF | V | IF=50A,Tj=125 | 1 | ||
| Reverse Current | Ir | mA | Tj=125,VR=1600V | 1.5 | ||
| NTC-Thermistor | ||||||
| Rated Resistance | R25 | k | 5 | |||
| Deviation of R100 | R/R | % | TC=100,R100=493.3 | -5 | 5 | |
| Power Dissipation | P25 | mW | 20 | |||
| B-value | B25/50 | K | R2=R25exp[B25/50(1/T2-1/(298.15K))] | 3375 | ||
| Module Characteristics (TC=25C unless otherwise specified) | ||||||
| Isolation voltage | Visol | V | t=1min,f=50Hz | 2500 | ||
| Operating Junction Temperature | Tvj op | -40 | 175 | |||
| Storage Temperature | Tstg | -40 | 150 | |||
| Stray Inductance | LCE | nH | per IGBT-inverter | 0.52 | ||
| per Diode-inverter | 0.81 | |||||
| per IGBT-brake-chopper | 0.66 | |||||
| per Diode-chopper | 1.5 | |||||
| per Diode-rectifier | 0.64 | |||||
| Module Lead Resistance , Terminal to Chip | Rcc+EE | m | TC=25, per switch | 0.009 | ||
| Module Lead Resistance , Terminal to Chip | RAA+CC | m | TC=25, per switch | 0.009 | ||
| Thermal Resistance Junction to Case | Rjc | K/W | per IGBT-inverter | 0.29 | ||
| per Diode-inverter | 0.44 | |||||
| per IGBT-brake-chopper | 0.32 | |||||
| per Diode-chopper | 0.33 | |||||
| per Diode-rectifier | 0.70 | |||||
| per Module | 0.009 | |||||
| Thermal Resistance Case to Sink | RCS | K/W | 0.009 | |||
| Module-to-Sink Torque | MS | Nm | 3 | 6 | ||
| Weight of Module | G | g | 180 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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