Hefei Purple Horn E-Commerce Co., Ltd.
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Operating Temperature | -55℃~+150℃ |
| Gate Charge(Qg) | 67nC@10V |
| Input Capacitance(Ciss) | 4.7nF |
| Output Capacitance(Coss) | 1.08nF |
| Description | 3V@250uA TO-220 Single IGBTs RoHS |
| Mfr. Part # | YSP040N010T1A |
| Package | TO-220 |
| Model Number | YSP040N010T1A |
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Product Specification
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Operating Temperature | -55℃~+150℃ | Gate Charge(Qg) | 67nC@10V |
| Input Capacitance(Ciss) | 4.7nF | Output Capacitance(Coss) | 1.08nF |
| Description | 3V@250uA TO-220 Single IGBTs RoHS | Mfr. Part # | YSP040N010T1A |
| Package | TO-220 | Model Number | YSP040N010T1A |
The YSP040N010T1A, YSK038N010T1A, and YSF040N010T1A are 100V N-Channel Power MOSFETs designed for high-efficiency applications. They feature extremely low on-resistance (RDS(on)) and an excellent Qg x RDS(on) product (FOM), making them ideal for demanding power management tasks. These MOSFETs are qualified according to JEDEC criteria and are 100% UIL Tested, ensuring reliability and performance in motor control, battery management, UPS, and DC/DC converter systems.
| Model | VDS (V) | ID (A) | RDS(on)@VGS=10V (m) | Package | Features |
| YSP040N010T1A | 100 | 120 | <4.2 | TO-220 | N-channel Power MOSFET, Extremely low on-resistance, Excellent Qg x RDS(on) product (FOM) |
| YSK038N010T1A | 100 | 120 | <4.2 | TO-263 | N-channel Power MOSFET, Extremely low on-resistance, Excellent Qg x RDS(on) product (FOM) |
| YSF040N010T1A | 100 | 120 | <4.2 | TO-220F | N-channel Power MOSFET, Extremely low on-resistance, Excellent Qg x RDS(on) product (FOM) |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 100 | 108 | - | V |
| G-S Threshold Voltage | VGS(th) | VGS = VCS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Zero gate voltage drain current | IDSS | VDS = 100V, VGS = 0V | - | 0.05 | 1 | A |
| Zero gate voltage drain current | IDSS | VDS = 100V, VGS = 0V, Tj=125C | - | 10 | 100 | A |
| G-S Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | 10 | 100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 50A | - | 3.2 | 4.0 | m |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 50A (TO-220) | - | 3.4 | 4.2 | m |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 50A (TO-263) | - | 3.2 | 4.0 | m |
| Transconductance | gfs | VDS=5V, ID=50A | - | 50 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1MHz | - | 4700 | - | pF |
| Output capacitance | Coss | VDS = 50V, VGS = 0V, f = 1MHz | - | 1080 | - | pF |
| Reverse transfer capacitance | Crss | VDS = 50V, VGS = 0V, f = 1MHz | - | 31 | - | pF |
| Gate Total Charge | Qg | VGS=10V, VDS=50V, ID=20A | - | 67 | - | nC |
| Gate-Source charge | Qgs | VGS=10V, VDS=50V, ID=20A | - | 27 | - | nC |
| Gate-Drain charge | Qg d | VGS=10V, VDS=50V, ID=20A | - | 11 | - | nC |
| Turn-on Delay Time | td(on) | VGS=10V, VDS=50V, RG=3.0 | - | 29 | - | ns |
| Rise Time | tr | VGS=10V, VDS=50V, RG=3.0 | - | 84 | - | ns |
| Turn-off Delay Time | td(off) | VGS=10V, VDS=50V, RG=3.0 | - | 46 | - | ns |
| Fall Time | tf | VGS=10V, VDS=50V, RG=3.0 | - | 93 | - | ns |
| Gate resistance | RG | VDS = 0V, VGS = 0V, f=1MHz | - | 1.8 | - | |
| Body Diode Characteristics | ||||||
| Body Diode Forward Voltage | VSD | ISD = 50A, VGS=0V | - | 0.85 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 50A, dI/dt=100A/s | - | 67 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = 50A, dI/dt=100A/s | - | 125 | - | nC |
| Parameter | Symbol | Value | Unit |
| Drain-Source Breakdown Voltage | VDS | 100 | V |
| DC collector current, limited by Tjmax | ID | 120 | A |
| Pulsed drain current, TC = 25C | IDM | 480 | A |
| Avalanche energy, single pulse | EAS | 306 | mJ |
| Gate source voltage | VGS | 20 | V |
| Power dissipation | Ptot | 236 | W |
| Operating junction temperature | Tj ,Tstg | -55...+150 | C |
| Thermal resistance, junction - case | R(j-c) | 0.54 | C/W |
| Thermal resistance, junction ambient(minimal footprint) | R(j-a) | 70 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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