Hefei Purple Horn E-Commerce Co., Ltd.
| Description | Single IGBTs RoHS |
| Mfr. Part # | MG06200S-BN4MM |
| Model Number | MG06200S-BN4MM |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | MG06200S-BN4MM |
| Model Number | MG06200S-BN4MM |
The MG06200S-BN4MM is a 600V, 200A IGBT Module from Littelfuse, designed for high-frequency switching applications. It features high short circuit capability, a positive temperature coefficient for VCE(sat), fast switching with short tail current, and integrated free-wheeling diodes with fast and soft reverse recovery. This module is suitable for applications such as medical devices, motion/servo control, and UPS systems.
| Symbol | Parameters | Test Conditions | Values | Unit |
| Absolute Maximum Ratings | ||||
| IGBT | ||||
| VCES | Collector - Emitter Voltage | TJ=25C | 600 | V |
| VGES | Gate - Emitter Voltage | 20 | V | |
| IC | DC Collector Current | TC=25C | 300 | A |
| TC=60C | 200 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 400 | A |
| Ptot | Power Dissipation Per IGBT | 600 | W | |
| Diode | ||||
| VRRM | Repetitive Reverse Voltage | TJ=25C | 600 | V |
| IF(AV) | Average Forward Current | TC=25C | 300 | A |
| TC=60C | 200 | A | ||
| IFRM | Repetitive Peak Forward Current | tp=1ms | 400 | A |
| I2t | TJ =125C, t=10ms, VR=0V | 3500 | A2s | |
| Module Characteristics | ||||
| TJ max | Max. Junction Temperature | 175 | C | |
| TJ op | Operating Temperature | -40 to 150 | C | |
| Tstg | Storage Temperature | -40 to 125 | C | |
| Visol | Insulation Test Voltage | AC, t=1min | 3000 | V |
| CTI | Comparative Tracking Index | 350 | ||
| Torque | Module-to-Sink Recommended (M6) | 3 to 5 | Nm | |
| Torque | Module Electrodes Recommended (M5) | 2.5 to 5 | Nm | |
| Weight | 160 | g | ||
| IGBT Electrical Characteristics | ||||
| VGE(th) | Gate - Emitter Threshold Voltage | VCE=VGE, IC=3.2mA | 4.9 to 6.5 | V |
| VCE(sat) | Collector - Emitter Saturation Voltage | IC=200A, VGE=15V, TJ=25C | 1.45 | V |
| IC=200A, VGE=15V, TJ=125C | 1.6 | V | ||
| ICES | Collector Leakage Current | VCE=600V, VGE=0V, TJ=25C | 1 | mA |
| VCE=600V, VGE=0V, TJ=125C | 5 | mA | ||
| IGES | Gate Leakage Current | VCE=0V,VGE=15V, TJ=125C | -400 to 400 | nA |
| RGint | Integrated Gate Resistor | 2 | ||
| Qge | Gate Charge | VCC=300V, IC=200A , VGE=15V | 2.15 | C |
| Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 13 | nF |
| Cres | Reverse Transfer Capacitance | 0.38 | nF | |
| td(on) | Turn - on Delay Time | VCC=300V, IC=200A, RG =2.0, VGE=15V, Inductive Load | 150 (TJ=25C), 160 (TJ=125C) | ns |
| tr | Rise Time | 30 (TJ=25C), 40 (TJ=125C) | ns | |
| td(off) | Turn - off Delay Time | 340 (TJ=25C), 370 (TJ=125C) | ns | |
| tf | Fall Time | 60 (TJ=25C), 70 (TJ=125C) | ns | |
| Eon | Turn - on Energy | 1 (TJ=25C), 1.55 (TJ=125C) | mJ | |
| Eoff | Turn - off Energy | 5.65 (TJ=25C), 6.9 (TJ=125C) | mJ | |
| ISC | Short Circuit Current | tpsc6S , VGE=15V; TJ=125C,VCC=360V | 1000 | A |
| RthJC | Junction-to-Case Thermal Resistance (Per IGBT) | 0.25 | K/W | |
| Diode Electrical Characteristics | ||||
| VF | Forward Voltage | IF=200A , VGE=0V, TJ =25C | 1.55 | V |
| IF=200A , VGE=0V, TJ =125C | 1.5 | V | ||
| IRRM | Max. Reverse Recovery Current | IF=200A , VR=300V, diF/dt=-5700A/s, TJ =125C | 230 | A |
| Qrr | Reverse Recovery Charge | 17 | C | |
| Erec | Reverse Recovery Energy | 5.2 | mJ | |
| RthJCD | Junction-to-Case Thermal Resistance (Per Diode) | 0.45 | K/W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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