| Description | Single IGBTs RoHS |
| Mfr. Part # | MG12100S-BN2MM |
| Model Number | MG12100S-BN2MM |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | MG12100S-BN2MM |
| Model Number | MG12100S-BN2MM |
The MG12100S-BN2MM is a 1200V, 100A IGBT Module from Littelfuse, featuring Trench+Field Stop technology for high short circuit capability and self-limiting short circuit current. It offers a positive temperature coefficient for VCE(sat), fast switching with short tail current, and integrated free-wheeling diodes with fast and soft reverse recovery. This module is designed for high-frequency switching applications, medical applications, motion/servo control, and UPS systems.
| Parameter | Test Conditions | Values | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| IGBT VCES | TJ=25C | 1200 | V |
| IGBT VGES | ±20 | V | |
| IGBT IC (DC Collector Current) | TC=25C | 140 | A |
| IGBT IC (DC Collector Current) | TC=80C | 100 | A |
| IGBT ICM (Repetitive Peak Collector Current) | tp=1ms | 200 | A |
| IGBT Ptot (Power Dissipation Per IGBT) | 450 | W | |
| Diode VRRM (Repetitive Reverse Voltage) | TJ=25C | 1200 | V |
| Diode IF(AV) (Average Forward Current) | TC=25C | 140 | A |
| Diode IF(AV) (Average Forward Current) | TC=80C | 100 | A |
| Diode IFRM (Repetitive Peak Forward Current) | tp=1ms | 200 | A |
| Diode I2t | TJ =125C, t=10ms, VR=0V | 1850 | A2s |
| Module Characteristics | |||
| TJ max (Max. Junction Temperature) | 150 | °C | |
| TJ op (Operating Temperature) | -40 to 125 | °C | |
| Tstg (Storage Temperature) | -40 to 125 | °C | |
| Visol (Insulation Test Voltage) | AC, t=1min | 3000 | V |
| CTI (Comparative Tracking Index) | 350 | ||
| Torque (Module-to-Sink Recommended (M6)) | 3 to 5 | N·m | |
| Torque (Module Electrodes Recommended (M5)) | 2.5 to 5 | N·m | |
| Weight | 160 | g | |
| IGBT Electrical Characteristics | |||
| VGE(th) (Gate - Emitter Threshold Voltage) | VCE=VGE, IC=4mA | 5.0 to 6.5 | V |
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=100A, VGE=15V, TJ=25°C | 1.7 | V |
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=100A, VGE=15V, TJ=125°C | 1.9 | V |
| ICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=25°C | 1 | mA |
| ICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=125°C | 5 | mA |
| IGES (Gate Leakage Current) | VCE=0V,VGE=±15V, TJ=125°C | ±400 | nA |
| RGint (Integrated Gate Resistor) | 7.5 | Ω | |
| Qge (Gate Charge) | VCC=600V, IC=100A , VGE=±15V | 0.9 | μC |
| Cies (Input Capacitance) | VCE=25V, VGE=0V, f =1MHz | 7.1 | nF |
| Cres (Reverse Transfer Capacitance) | 0.3 | nF | |
| td(on) (Turn - on Delay Time) | VCC=600V IC=100A RG =3.9Ω VGE=±15V Inductive Load TJ =25°C | 260 | ns |
| td(on) (Turn - on Delay Time) | VCC=600V IC=100A RG =3.9Ω VGE=±15V Inductive Load TJ =125°C | 290 | ns |
| tr (Rise Time) | TJ =25°C | 30 | ns |
| tr (Rise Time) | TJ =125°C | 50 | ns |
| td(off) (Turn - off Delay Time) | TJ =25°C | 420 | ns |
| td(off) (Turn - off Delay Time) | TJ =125°C | 520 | ns |
| tf (Fall Time) | TJ =25°C | 70 | ns |
| tf (Fall Time) | TJ =125°C | 90 | ns |
| Eon (Turn - on Energy) | TJ =25°C | 7.8 | mJ |
| Eon (Turn - on Energy) | TJ =125°C | 10 | mJ |
| Eoff (Turn - off Energy) | TJ =25°C | 8 | mJ |
| Eoff (Turn - off Energy) | TJ =125°C | 10 | mJ |
| ISC (Short Circuit Current) | tpsc≤10μS , VGE=15V TJ=125°C,VCC=900V | 400 | A |
| RthJC (Junction-to-Case Thermal Resistance (Per IGBT)) | 0.28 | K/W | |
| Diode Electrical Characteristics | |||
| VF (Forward Voltage) | IF=100A , VGE=0V, TJ =25°C | 1.65 | V |
| VF (Forward Voltage) | IF=100A , VGE=0V, TJ =125°C | 1.65 | V |
| IRRM (Max. Reverse Recovery Current) | IF=100A , VR=600V diF/dt=-2500A/μs TJ =125°C | 140 | A |
| Qrr (Reverse Recovery Charge) | 20.0 | μC | |
| Erec (Reverse Recovery Energy) | 9 | mJ | |
| RthJCD (Junction-to-Case Thermal Resistance (Per Diode)) | 0.5 | K/W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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