Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 90ns |
| Pd - Power Dissipation | 268W |
| Td(on) | 19ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@50mA |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 99nC@15V |
| Reverse Recovery Time(trr) | 79ns |
| Switching Energy(Eoff) | 290uJ |
| Turn-On Energy (Eon) | 470uJ |
| Input Capacitance(Cies) | 3.335nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 105pF |
| Description | 268W 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS |
| Mfr. Part # | FGHL50T65MQDT |
| Package | TO-247-3L |
| Model Number | FGHL50T65MQDT |
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Product Specification
| Td(off) | 90ns | Pd - Power Dissipation | 268W |
| Td(on) | 19ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@50mA | Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 99nC@15V | Reverse Recovery Time(trr) | 79ns |
| Switching Energy(Eoff) | 290uJ | Turn-On Energy (Eon) | 470uJ |
| Input Capacitance(Cies) | 3.335nF | Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 105pF | Description | 268W 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS |
| Mfr. Part # | FGHL50T65MQDT | Package | TO-247-3L |
| Model Number | FGHL50T65MQDT |
The onsemi FGHL50T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for easy parallel operation due to its positive temperature coefficient, this IGBT is suitable for demanding applications like solar inverters, UPS, ESS, PFC, and converters.
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage (Transient) | VGES | ±30 | V | |
| Collector Current (@ TC = 25°C) | IC | 80 | A | |
| Collector Current (@ TC = 100°C) | IC | 50 | A | |
| Pulsed Collector Current | ILM | 200 | A | (Note 2) |
| Diode Forward Current (@ TC = 25°C) | IF | 60 | A | |
| Diode Forward Current (@ TC = 100°C) | IF | 50 | A | |
| Maximum Power Dissipation (@ TC = 25°C) | PD | 268 | W | |
| Maximum Power Dissipation (@ TC = 100°C) | PD | 134 | W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C | |
| Collector to Emitter Saturation Voltage (Typ.) | VCE(sat) | 1.45 | V | IC = 50 A, TJ = 25°C |
| Input Capacitance (Typ.) | Cies | 3335 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Total Gate Charge (Typ.) | Qg | 99 | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Turn-on Delay Time (Typ.) | td(on) | 19 | ns | VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C |
| Turn-off Delay Time (Typ.) | td(off) | 96 | ns | VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C |
| Diode Forward Voltage (Typ.) | VF | 1.65 | V | IF = 50 A, TJ = 25°C |
| Diode Reverse Recovery Energy (Typ.) | Erec | 65 | µJ | VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C |
| Diode Reverse Recovery Time (Typ.) | Trr | 44 | ns | VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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