Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 375W |
| Td(off) | 181ns |
| Td(on) | 32ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@75mA |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Gate Charge(Qg) | 149nC |
| Reverse Recovery Time(trr) | 107ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 1.2mJ |
| Input Capacitance(Cies) | 4.954nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 163pF |
| Description | IGBT FS (Field Stop) 650V 80A 375W Through Hole TO-247-4LD |
| Mfr. Part # | FGHL75T65MQDTL4 |
| Package | TO-247-4LD |
| Model Number | FGHL75T65MQDTL4 |
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Product Specification
| Pd - Power Dissipation | 375W | Td(off) | 181ns |
| Td(on) | 32ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@75mA | Operating Temperature | -55℃~+175℃@(Tj) |
| Gate Charge(Qg) | 149nC | Reverse Recovery Time(trr) | 107ns |
| Switching Energy(Eoff) | 1.1mJ | Turn-On Energy (Eon) | 1.2mJ |
| Input Capacitance(Cies) | 4.954nF | Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 163pF | Description | IGBT FS (Field Stop) 650V 80A 375W Through Hole TO-247-4LD |
| Mfr. Part # | FGHL75T65MQDTL4 | Package | TO-247-4LD |
| Model Number | FGHL75T65MQDTL4 |
The FGHL75T65MQDTL4 is a 650 V, 75 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology with full current-rated copack diode. It offers a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. Optimized for smooth and efficient switching, this device is suitable for applications such as solar inverters, UPS, ESS, and PFC converters.
| Rating | Symbol | Value | Unit | Conditions |
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage | VGES | 20 | V | |
| Transient Gate to Emitter Voltage | 30 | V | ||
| Collector Current | IC | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Collector Current | ILM | 300 | A | (Note 2) |
| Pulsed Collector Current | ICM | 300 | A | (Note 3) |
| Diode Forward Current | IF | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Diode Maximum Forward Current | IFM | 300 | A | |
| Maximum Power Dissipation | PD | 375 / 188 | W | @ TC = 25C / 100C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | 55 to +175 | C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 260 | C | (1/8 from Case for 5 s) |
| Collector-emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES/TJ | 0.6 | V/C | VGE = 0 V, IC = 1 mA |
| Collector-emitter Cut-off Current | ICES | 250 A | VGE = 0 V, VCE = 650 V | |
| Gate Leakage Current | IGES | 400 nA | VGE = 20 V, VCE = 0 V | |
| Gate-emitter Threshold Voltage | VGE(th) | 3.0 / 4.5 / 6.0 | V | VGE = VCE, IC = 75 mA |
| Collector-emitter Saturation Voltage | VCE(sat) | 1.45 / 1.65 | V | VGE = 15 V, IC = 75 A, TJ = 25C / 175C |
| Input Capacitance | Cies | 4954 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 163 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 14 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | 149 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-emitter Charge | Qge | 27 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-collector Charge | Qgc | 34 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Turn-on Delay Time | td(on) | 30 / 32 / 27 / 30 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Rise Time | tr | 16 / 29 / 19 / 32 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Delay Time | td(off) | 190 / 181 / 206 / 198 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Fall Time | tf | 35 / 32 / 44 / 40 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-on Switching Loss | Eon | 0.6 / 1.2 / 1.9 / 2.0 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Switching Loss | Eoff | 0.5 / 1.1 / 1.8 / 1.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Total Switching Loss | Ets | 1.1 / 2.3 / 1.8 / 3.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Diode Forward Voltage | VFM | 1.65 / 1.55 | V | IF = 75 A, TJ = 25C / 175C |
| Reverse Recovery Energy | EREC | 105 / 235 / 747 / 865 | J | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Time | Trr | 58 / 107 / 151 / 171 | ns | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Charge | Qrr | 591 / 1113 / 2780 / 3286 | nC | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Thermal Resistance Junction-to-case (IGBT) | R JC | 0.40 | C/W | |
| Thermal Resistance Junction-to-case (Diode) | R JC | 0.60 | C/W | |
| Thermal Resistance Junction-to-ambient | R JA | 40 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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