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China power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor
China power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor

  1. China power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor

power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor

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Td(off) 67ns
Pd - Power Dissipation 60W
Td(on) 15ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) -
IGBT Type NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6V@50uA
Gate Charge(Qg) 14nC
Operating Temperature -55℃~+150℃@(Tj)
Switching Energy(Eoff) 90uJ
Turn-On Energy (Eon) 70uJ
Description IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
Mfr. Part # HGTD1N120BNS9A
Package TO-252AA
Model Number HGTD1N120BNS9A

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  1. Product Details
  2. Company Details

Product Specification

Td(off) 67ns Pd - Power Dissipation 60W
Td(on) 15ns Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) - IGBT Type NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6V@50uA Gate Charge(Qg) 14nC
Operating Temperature -55℃~+150℃@(Tj) Switching Energy(Eoff) 90uJ
Turn-On Energy (Eon) 70uJ Description IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
Mfr. Part # HGTD1N120BNS9A Package TO-252AA
Model Number HGTD1N120BNS9A

Product Overview

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies, and drivers for solenoids and relays. Formerly Developmental Type TA49316.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Origin: United States and/or other countries
  • Certifications: Not specified in the provided text.

Technical Specifications

Part NumberPackageBrandCollector to Emitter Voltage (V)Collector Current Continuous (A at TC=25C)Gate to Emitter Voltage (V)Power Dissipation (W at TC=25C)Thermal Resistance Junction To Case (C/W)
HGTD1N120BNSTO-252AA1N120B12005.320602.1
HGTP1N120BNTO-220AB1N120BN12005.320602.1

2409301504_onsemi-HGTD1N120BNS9A_C462776.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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