| Td(off) | 67ns |
| Pd - Power Dissipation | 60W |
| Td(on) | 15ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA |
| Gate Charge(Qg) | 14nC |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Switching Energy(Eoff) | 90uJ |
| Turn-On Energy (Eon) | 70uJ |
| Description | IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA |
| Mfr. Part # | HGTD1N120BNS9A |
| Package | TO-252AA |
| Model Number | HGTD1N120BNS9A |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 67ns | Pd - Power Dissipation | 60W |
| Td(on) | 15ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - | IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA | Gate Charge(Qg) | 14nC |
| Operating Temperature | -55℃~+150℃@(Tj) | Switching Energy(Eoff) | 90uJ |
| Turn-On Energy (Eon) | 70uJ | Description | IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA |
| Mfr. Part # | HGTD1N120BNS9A | Package | TO-252AA |
| Model Number | HGTD1N120BNS9A |
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies, and drivers for solenoids and relays. Formerly Developmental Type TA49316.
| Part Number | Package | Brand | Collector to Emitter Voltage (V) | Collector Current Continuous (A at TC=25C) | Gate to Emitter Voltage (V) | Power Dissipation (W at TC=25C) | Thermal Resistance Junction To Case (C/W) |
| HGTD1N120BNS | TO-252AA | 1N120B | 1200 | 5.3 | 20 | 60 | 2.1 |
| HGTP1N120BN | TO-220AB | 1N120BN | 1200 | 5.3 | 20 | 60 | 2.1 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!