Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 114ns |
| Pd - Power Dissipation | 375W |
| Td(on) | 23ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@75mA |
| Gate Charge(Qg) | 128nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 76ns |
| Switching Energy(Eoff) | 70uJ |
| Turn-On Energy (Eon) | 300uJ |
| Input Capacitance(Cies) | 4.845nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 155pF |
| Description | IGBT FS (Field Stop) 650V 150A 375W Through Hole TO-247-G03 |
| Mfr. Part # | FGH75T65SQDT-F155 |
| Package | TO-247-G03 |
| Model Number | FGH75T65SQDT-F155 |
View Detail Information
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Product Specification
| Td(off) | 114ns | Pd - Power Dissipation | 375W |
| Td(on) | 23ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@75mA | Gate Charge(Qg) | 128nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 76ns |
| Switching Energy(Eoff) | 70uJ | Turn-On Energy (Eon) | 300uJ |
| Input Capacitance(Cies) | 4.845nF | Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 155pF | Description | IGBT FS (Field Stop) 650V 150A 375W Through Hole TO-247-G03 |
| Mfr. Part # | FGH75T65SQDT-F155 | Package | TO-247-G03 |
| Model Number | FGH75T65SQDT-F155 |
The FGH75T65SQDT is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor. Leveraging novel field stop IGBT technology, this 4th generation IGBT offers optimal performance for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and fast switching characteristics.
| Part Number | Description | VCES (V) | VGES (V) | IC @ TC=25C (A) | IC @ TC=100C (A) | ILM (A) | VCE(sat) Typ. @ IC=75A (V) | TJ (C) | PD @ TC=25C (W) | RJC(IGBT) (C/W) | RJC(Diode) (C/W) | RJA (C/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGH75T65SQDT | 650 V, 75 A Field Stop Trench IGBT | 650 | ±20 | 150 | 75 | 300 | 1.6 | -55 to +175 | 375 | 0.4 | 0.65 | 40 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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