Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 115ns |
| Pd - Power Dissipation | 290W |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 120nC |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | 45ns |
| Switching Energy(Eoff) | 310uJ |
| Turn-On Energy (Eon) | 1.13mJ |
| Input Capacitance(Cies) | 2.11nF |
| Output Capacitance(Coes) | 200pF |
| Description | IGBT FS (Field Stop) 600V 80A 290W Through Hole TO-247 |
| Mfr. Part # | FGH40N60SFDTU |
| Package | TO-247 |
| Model Number | FGH40N60SFDTU |
View Detail Information
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Product Specification
| Td(off) | 115ns | Pd - Power Dissipation | 290W |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Gate Charge(Qg) | 120nC |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | 45ns |
| Switching Energy(Eoff) | 310uJ | Turn-On Energy (Eon) | 1.13mJ |
| Input Capacitance(Cies) | 2.11nF | Output Capacitance(Coes) | 200pF |
| Description | IGBT FS (Field Stop) 600V 80A 290W Through Hole TO-247 | Mfr. Part # | FGH40N60SFDTU |
| Package | TO-247 | Model Number | FGH40N60SFDTU |
The FGH40N60SFD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop technology. It offers an optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, microwave ovens, and telecom systems. Key advantages include high current capability, low saturation voltage (VCE(sat) = 2.3 V @ IC = 40 A), high input impedance, and fast switching speeds. The device is RoHS compliant.
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector to Emitter Voltage (VCES) | 600 | V | |||
| Gate to Emitter Voltage (VGES) | ±20 | ±30 | V | ||
| Collector Current @ TC = 25°C (IC) | 80 | A | |||
| Collector Current @ TC = 100°C (IC) | 40 | A | |||
| Pulsed Collector Current @ TC = 25°C (ICM) | (1) | 120 | A | ||
| Maximum Power Dissipation @ TC = 25°C (PD) | 290 | W | |||
| Maximum Power Dissipation @ TC = 100°C (PD) | 116 | W | |||
| Operating Junction Temperature (TJ) | -55 | +150 | °C | ||
| Storage Temperature Range (Tstg) | -55 | +150 | °C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds (TL) | 300 | °C | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RθJC(IGBT)) | - | 0.43 | °C/W | ||
| Thermal Resistance, Junction to Case (RθJC(Diode)) | - | 1.45 | °C/W | ||
| Thermal Resistance, Junction to Ambient (RθJA) | - | 40 | °C/W | ||
| Electrical Characteristics of the IGBT | |||||
| Collector to Emitter Breakdown Voltage (BVCES) | VGE = 0 V, IC = 250 μA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage (ΔBVCES / ΔTJ) | VGE = 0 V, IC = 250 μA | - | 0.6 | - | V/°C |
| Collector Cut-Off Current (ICES) | VCE = VCES, VGE = 0 V | - | - | 250 | μA |
| G-E Leakage Current (IGES) | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| G-E Threshold Voltage (VGE(th)) | IC = 250 μA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V | - | 2.3 | 2.9 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V, TC = 125°C | - | 2.5 | - | V |
| Input Capacitance (Cies) | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 2110 | - | pF |
| Output Capacitance (Coes) | - | 200 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 60 | - | pF | |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 25 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 42 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 115 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 27 | 54 | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.13 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 0.31 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.44 | - | mJ |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 24 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 43 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 120 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 30 | - | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.14 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 0.48 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.62 | - | mJ |
| Total Gate Charge (Qg) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 120 | - | nC |
| Gate to Emitter Charge (Qge) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 14 | - | nC |
| Gate to Collector Charge (Qgc) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 58 | - | nC |
| Electrical Characteristics of the Diode | |||||
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 25°C | - | 1.95 | 2.6 | V |
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 125°C | - | 1.85 | - | V |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 25°C | - | 45 | - | ns |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 125°C | - | 140 | - | ns |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 25°C | - | 75 | - | nC |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 125°C | - | 375 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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