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Hefei Purple Horn E-Commerce Co., Ltd.

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China High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC
China High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC

  1. China High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC

High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC

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Td(off) 240ns
Pd - Power Dissipation 298W
Td(on) 26ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) -
IGBT Type NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6V@90uA
Gate Charge(Qg) 120nC@15V
Operating Temperature -55℃~+150℃@(Tj)
Reverse Recovery Time(trr) 70ns
Switching Energy(Eoff) 1.3mJ
Turn-On Energy (Eon) 950uJ
Description 298W 1.2kV NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS
Mfr. Part # HGTG11N120CND
Package TO-247AC-3
Model Number HGTG11N120CND

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  1. Product Details
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Product Specification

Td(off) 240ns Pd - Power Dissipation 298W
Td(on) 26ns Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) - IGBT Type NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6V@90uA Gate Charge(Qg) 120nC@15V
Operating Temperature -55℃~+150℃@(Tj) Reverse Recovery Time(trr) 70ns
Switching Energy(Eoff) 1.3mJ Turn-On Energy (Eon) 950uJ
Description 298W 1.2kV NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS Mfr. Part # HGTG11N120CND
Package TO-247AC-3 Model Number HGTG11N120CND

Product Overview

The HGTG11N120CND is a Non-Punch Through (NPT) Series N-Channel IGBT with an integrated Anti-Parallel Hyperfast Diode. This device combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it ideal for high voltage switching applications at moderate frequencies where low conduction losses are crucial. Applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.

Product Attributes

  • Brand: FAIRCHILD SEMICONDUCTOR
  • Part Number: HGTG11N120CND
  • Package: TO-247
  • Development Type (IGBT): TA49291
  • Development Type (Diode): TA49189
  • Formerly Developmental Type: TA49303
  • Certifications: Covered by U.S. Patents (list provided in source)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnits
Collector to Emitter Breakdown VoltageBVCESIC = 250A, VGE = 0V1200--V
IC = 250A, VGE = 0V1200--V
Collector to Emitter Leakage CurrentICESVCE = 1200V, TC = 25C--250A
VCE = 1200V, TC = 125C-300-A
VCE = 1200V, TC = 150C--3.5mA
Collector to Emitter Saturation VoltageVCE(SAT)IC = 11A, VGE = 15V, TC = 25C-2.12.4V
IC = 11A, VGE = 15V, TC = 150C-2.93.5V
Gate to Emitter Threshold VoltageVGE(TH)IC = 90A, VCE = VGE6.06.8-V
Gate to Emitter Leakage CurrentIGESVGE = 20V--250nA
Current Turn-On Delay Timetd(ON)IIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-2326ns
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-2124ns
Current Rise TimetrIIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-1216ns
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-1216ns
Current Turn-Off Delay Timetd(OFF)IIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-180240ns
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-210280ns
Current Fall TimetfIIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-190220ns
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-360400ns
Turn-On Energy LossEONIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-0.951.3mJ
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-1.92.5mJ
Turn-Off Energy LossEOFFIGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-1.31.6mJ
IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH-2.12.5mJ
Diode Forward VoltageVECIEC = 11A-2.63.2V
IEC = 1A, dlEC/dt = 200A/s-3240ns
Diode Reverse Recovery TimetrrIEC = 11A, dlEC/dt = 200A/s-6070ns
IEC = 1A, dlEC/dt = 200A/s-3240ns
Thermal Resistance Junction To Case (IGBT)RJC---0.42C/W
Thermal Resistance Junction To Case (Diode)RJC---1.25C/W
Collector Current ContinuousICAt TC = 25C--43A
At TC = 110C--22A
Collector Current PulsedICM(Note 1)--80A
Gate to Emitter Voltage ContinuousVGES--20V
Gate to Emitter Voltage PulsedVGEM--30V
Switching Safe Operating AreaSSOAat TJ = 150C (Figure 2)-55-A at 1200V
Power Dissipation TotalPDat TC = 25C--298W
Power Dissipation DeratingTC > 25C--2.38W/C
Operating and Storage Junction Temperature RangeTJ, TSTG--55-150C
Maximum Lead Temperature for SolderingTL---260C
Short Circuit Withstand TimetSCat VGE = 15V (Note 2)--8s
at VGE = 12V (Note 2)--15s

2410121702_onsemi-HGTG11N120CND_C11755.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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