| Td(off) | 240ns |
| Pd - Power Dissipation | 298W |
| Td(on) | 26ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@90uA |
| Gate Charge(Qg) | 120nC@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | 950uJ |
| Description | 298W 1.2kV NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS |
| Mfr. Part # | HGTG11N120CND |
| Package | TO-247AC-3 |
| Model Number | HGTG11N120CND |
View Detail Information
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Product Specification
| Td(off) | 240ns | Pd - Power Dissipation | 298W |
| Td(on) | 26ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - | IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@90uA | Gate Charge(Qg) | 120nC@15V |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 1.3mJ | Turn-On Energy (Eon) | 950uJ |
| Description | 298W 1.2kV NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS | Mfr. Part # | HGTG11N120CND |
| Package | TO-247AC-3 | Model Number | HGTG11N120CND |
The HGTG11N120CND is a Non-Punch Through (NPT) Series N-Channel IGBT with an integrated Anti-Parallel Hyperfast Diode. This device combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it ideal for high voltage switching applications at moderate frequencies where low conduction losses are crucial. Applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector to Emitter Breakdown Voltage | BVCES | IC = 250A, VGE = 0V | 1200 | - | - | V |
| IC = 250A, VGE = 0V | 1200 | - | - | V | ||
| Collector to Emitter Leakage Current | ICES | VCE = 1200V, TC = 25C | - | - | 250 | A |
| VCE = 1200V, TC = 125C | - | 300 | - | A | ||
| VCE = 1200V, TC = 150C | - | - | 3.5 | mA | ||
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 11A, VGE = 15V, TC = 25C | - | 2.1 | 2.4 | V |
| IC = 11A, VGE = 15V, TC = 150C | - | 2.9 | 3.5 | V | ||
| Gate to Emitter Threshold Voltage | VGE(TH) | IC = 90A, VCE = VGE | 6.0 | 6.8 | - | V |
| Gate to Emitter Leakage Current | IGES | VGE = 20V | - | - | 250 | nA |
| Current Turn-On Delay Time | td(ON)I | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 23 | 26 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 21 | 24 | ns | ||
| Current Rise Time | trI | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 12 | 16 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 12 | 16 | ns | ||
| Current Turn-Off Delay Time | td(OFF)I | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 180 | 240 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 210 | 280 | ns | ||
| Current Fall Time | tfI | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 190 | 220 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 360 | 400 | ns | ||
| Turn-On Energy Loss | EON | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 0.95 | 1.3 | mJ |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 1.9 | 2.5 | mJ | ||
| Turn-Off Energy Loss | EOFF | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 1.3 | 1.6 | mJ |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 2.1 | 2.5 | mJ | ||
| Diode Forward Voltage | VEC | IEC = 11A | - | 2.6 | 3.2 | V |
| IEC = 1A, dlEC/dt = 200A/s | - | 32 | 40 | ns | ||
| Diode Reverse Recovery Time | trr | IEC = 11A, dlEC/dt = 200A/s | - | 60 | 70 | ns |
| IEC = 1A, dlEC/dt = 200A/s | - | 32 | 40 | ns | ||
| Thermal Resistance Junction To Case (IGBT) | RJC | - | - | - | 0.42 | C/W |
| Thermal Resistance Junction To Case (Diode) | RJC | - | - | - | 1.25 | C/W |
| Collector Current Continuous | IC | At TC = 25C | - | - | 43 | A |
| At TC = 110C | - | - | 22 | A | ||
| Collector Current Pulsed | ICM | (Note 1) | - | - | 80 | A |
| Gate to Emitter Voltage Continuous | VGES | - | - | 20 | V | |
| Gate to Emitter Voltage Pulsed | VGEM | - | - | 30 | V | |
| Switching Safe Operating Area | SSOA | at TJ = 150C (Figure 2) | - | 55 | - | A at 1200V |
| Power Dissipation Total | PD | at TC = 25C | - | - | 298 | W |
| Power Dissipation Derating | TC > 25C | - | - | 2.38 | W/C | |
| Operating and Storage Junction Temperature Range | TJ, TSTG | - | -55 | - | 150 | C |
| Maximum Lead Temperature for Soldering | TL | - | - | - | 260 | C |
| Short Circuit Withstand Time | tSC | at VGE = 15V (Note 2) | - | - | 8 | s |
| at VGE = 12V (Note 2) | - | - | 15 | s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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