Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 80ns |
| Pd - Power Dissipation | 455W |
| Td(on) | 28ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 43pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA |
| Gate Charge(Qg) | 123nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 43.4ns |
| Switching Energy(Eoff) | 720uJ |
| Turn-On Energy (Eon) | 2.4mJ |
| Input Capacitance(Cies) | 3.68nF |
| Pulsed Current- Forward(Ifm) | 225A |
| Output Capacitance(Coes) | 179pF |
| Description | IGBT FS (Field Stop) 650V 150A 455W Through Hole TO-247-G03 |
| Mfr. Part # | FGH75T65SHD-F155 |
| Package | TO-247-G03 |
| Model Number | FGH75T65SHD-F155 |
View Detail Information
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Product Specification
| Td(off) | 80ns | Pd - Power Dissipation | 455W |
| Td(on) | 28ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 43pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA | Gate Charge(Qg) | 123nC |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 43.4ns |
| Switching Energy(Eoff) | 720uJ | Turn-On Energy (Eon) | 2.4mJ |
| Input Capacitance(Cies) | 3.68nF | Pulsed Current- Forward(Ifm) | 225A |
| Output Capacitance(Coes) | 179pF | Description | IGBT FS (Field Stop) 650V 150A 455W Through Hole TO-247-G03 |
| Mfr. Part # | FGH75T65SHD-F155 | Package | TO-247-G03 |
| Model Number | FGH75T65SHD-F155 |
The FGH75T65SHD is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor, leveraging novel field stop IGBT technology for optimal performance in demanding applications. It offers a positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. This IGBT is designed for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC systems.
| Part Number | Description | Absolute Maximum Ratings | Thermal Characteristics | Electrical Characteristics (IGBT) | Electrical Characteristics (Diode) |
| FGH75T65SHD | 650 V, 75 A Field Stop Trench IGBT | VCES: 650 V, VGES: 20 V, IC (TC=25C): 150 A, IC (TC=100C): 75 A, PD (TC=25C): 455 W, TJ: -55 to +175 C | RJC(IGBT): 0.33 C/W, RJC(Diode): 0.65 C/W, RJA: 40 C/W | BVCES: 650 V, ICES: 250 A, IGES: 400 nA, VGE(th): 4.0 - 7.5 V, VCE(sat) (IC=75 A, VGE=15 V): 1.6 V (Typ.) | VFM (IF=50 A, TC=25C): 2.2 V (Typ.) |
| Features: | Cies: 3680 pF (Typ.), Coes: 179 pF (Typ.), Cres: 43 pF (Typ.) | Erec (IF=50 A, dIF/dt=200 A/s, TC=175C): 60 uJ (Typ.) | |||
| trr (TC=25C): 43.4 ns (Typ.) | |||||
| Qrr (TC=25C): 87.9 nC (Typ.) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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