Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 55ns |
| Pd - Power Dissipation | 230W |
| Td(on) | 6ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 37pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA |
| Gate Charge(Qg) | 60nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 500uJ |
| Input Capacitance(Cies) | 1.565nF |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 120pF |
| Description | 230W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | MBQ40T65QESTH |
| Package | TO-247 |
| Model Number | MBQ40T65QESTH |
View Detail Information
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Product Specification
| Td(off) | 55ns | Pd - Power Dissipation | 230W |
| Td(on) | 6ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 37pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA | Gate Charge(Qg) | 60nC@15V |
| Operating Temperature | -40℃~+175℃ | Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 400uJ | Turn-On Energy (Eon) | 500uJ |
| Input Capacitance(Cies) | 1.565nF | Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 120pF | Description | 230W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | MBQ40T65QESTH | Package | TO-247 |
| Model Number | MBQ40T65QESTH |
The Magnachip MBQ40T65QES is a 650V Field Stop IGBT designed for high-speed switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers excellent quality and performance. It is suitable for applications such as inverters, welding converters, and high-range switching frequency converters.
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Maximum Rating | ||||
| Collector-emitter voltage | VCE | 650 | V | |
| DC collector current, limited by Tvjmax | IC | TC=25C | 80 | A |
| DC collector current, limited by Tvjmax | IC | TC=100C | 40 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 120 | A | |
| Diode forward current limited by Tvjmax | IF | TC=25C | 40 | A |
| Diode forward current limited by Tvjmax | IF | TC=100C | 20 | |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 120 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | PD | TC=25C | 230 | W |
| Power dissipation | PD | TC=100C | 115 | W |
| Operating Junction temperature range | Tvj | -40~175 | C | |
| Storage temperature range | Tstg | -55~150 | C | |
| Thermal Characteristic | ||||
| Thermal resistance junction-to-ambient | RJA | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT | RJC | 0.65 | ||
| Thermal resistance junction-to-case for Diode | RJC | 1.75 | ||
| Features | ||||
| High Speed Switching & Low Power Loss | VCE(sat) | @ IC = 40A | 1.8 | V |
| Maximum junction temperature | 175 | C | ||
| Electrical Characteristic (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | IC = 2mA, VGE = 0V | 650 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE= 15V, Tvj = 25C | - 2.3 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE= 15V, Tvj = 175C | - 2.3 | |
| Diode forward voltage | VF | VGE = 0V, IF = 20A, Tvj = 25C | - 1.95 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 20A, Tvj = 175C | - 1.5 | |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 40mA | 3.5 - 6.5 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 40 | A |
| Gate-emitter leakage current | IGES | VGE = 20V, VCE = 0V | - 100 | nA |
| Dynamic Characteristic | ||||
| Total gate charge | Qg | VCE = 520V, IC = 40A, VGE = 15V | - 60 | nC |
| Gate-emitter charge | Qge | - 13 | ||
| Gate-collector charge | Qgc | - 25 | ||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - 1565 | pF |
| Reverse transfer capacitance | Cres | - 37 | ||
| Output capacitance | Coes | - 120 | ||
| Switching Characteristic (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load | - 6 | ns |
| Rise time | tr | - 36 | ||
| Turn-off delay time | td(off) | - 55 | ||
| Fall time | tf | - 64 | ||
| Turn-on switching energy | Eon | - 0.5 | mJ | |
| Turn-off switching energy | Eoff | - 0.4 | mJ | |
| Total switching energy | Ets | - 0.9 | mJ | |
| Switching Characteristic (Tvj = 175C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load | - 7 | ns |
| Rise time | tr | - 41 | ||
| Turn-off delay time | td(off) | - 60 | ||
| Fall time | tf | - 102 | ||
| Turn-on switching energy | Eon | - 1.04 | mJ | |
| Turn-off switching energy | Eoff | - 0.57 | mJ | |
| Total switching energy | Ets | - 1.61 | mJ | |
| Diode Characteristic (Tvj = 25C) | ||||
| Reverse recovery time | trr | IF = 20A, diF/dt = 820A/ s | - 60 | ns |
| Reverse recovery current | Irr | - 18 | A | |
| Reverse recovery charge | Qrr | - 696 | nC | |
| Diode Characteristic (Tvj = 175C) | ||||
| Reverse recovery time | trr | IF = 20A, diF/dt = 820A/ s | - 72 | ns |
| Reverse recovery current | Irr | - 22 | A | |
| Reverse recovery charge | Qrr | - 864 | nC | |
| Ordering Information | ||||
| Part Number | Marking | Temp. Range | Package | Packing |
| MBQ40T65QESTH | 40T65QES | -55~150C | TO-247 | Tube |
| Physical Dimension | ||||
| Dimension | Min(mm) | Max(mm) | ||
| A | 4.70 | 5.31 | ||
| A1 | 2.20 | 2.60 | ||
| A2 | 1.50 | 2.49 | ||
| b | 0.99 | 1.40 | ||
| b1 | 2.59 | 3.43 | ||
| b2 | 1.65 | 2.39 | ||
| c | 0.38 | 0.89 | ||
| D | 20.30 | 21.46 | ||
| D1 | 13.08 | - | ||
| E | 15.45 | 16.26 | ||
| E1 | 13.06 | 14.02 | ||
| E2 | 4.32 | 5.49 | ||
| e | 5.45BSC | |||
| L | 19.81 | 20.57 | ||
| L1 | - | 4.50 | ||
| P | 3.50 | 3.70 | ||
| Q | 5.38 | 6.20 | ||
| S | 6.15BSC | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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