Hefei Purple Horn E-Commerce Co., Ltd.
| Description | Single IGBTs RoHS |
| Mfr. Part # | MIP25R12E1TN-BP |
| Model Number | MIP25R12E1TN-BP |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | MIP25R12E1TN-BP |
| Model Number | MIP25R12E1TN-BP |
The MIP25R12E1TN is a 1200V, 25A IGBT module designed for various power electronics applications. It features low switching losses, low Vce(sat) with a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. The module boasts a low inductance case, high short circuit capability (10s), and a maximum junction temperature of 175. Its epoxy meets UL 94 V-0 flammability rating and it is Lead Free Finish/RoHS Compliant.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| IGBT - Inverter | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Continuous Collector Current | IC | TC=100, Tvjmax=175 | 25 | A | ||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 50 | A | ||
| Gate-Emitter Voltage | VGES | ±20 | V | |||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 166 | W | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=1.2mA,Tvj=25 | 5.2 | 5.9 | 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1 | mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=25A,VGE=15V, Tvj=25 | 1.90 | V | ||
| IC=25A,VGE=15V, Tvj=125 | 2.20 | V | ||||
| IC=25A,VGE=15V, Tvj=150 | 2.30 | V | ||||
| Gate Charge | Qg | VCE=600V, IC=25A, VGE=±15V, RG=33Ω, Tvj=25 | 0.2 | μC | ||
| Input Capacitance | Cies | VCE=25V,VGE=0V,f=1MHz, Tvj=25 | 1.45 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.05 | nF | |||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj=25 | 400 | nA | ||
| Turn-On Delay Time | td(on) | VCE=600V, IC=25A, VGE=±15V, RG=33Ω, Tvj=25 | 16 | ns | ||
| Rise Time | tr | 37 | ns | |||
| Turn-Off Delay Time | td(off) | 104 | ns | |||
| Fall Time | tf | 279 | ns | |||
| Turn-On Energy | Eon | 2.58 | mJ | |||
| Turn-Off Energy | Eoff | 1.68 | mJ | |||
| Turn-On Delay Time | td(on) | VCE=600V, IC=25A, VGE=±15V, RG=33Ω, Tvj=150 | 14 | ns | ||
| Rise Time | tr | 42 | ns | |||
| Turn-Off Delay Time | td(off) | 110 | ns | |||
| Fall Time | tf | 373 | ns | |||
| Turn-On Energy | Eon | 3.12 | mJ | |||
| Turn-Off Energy | Eoff | 2.03 | mJ | |||
| SC Data | ISC | Tp≤10μs,VGE=15V,Tvj=150°C, VCC=900V,VCEM≤1200V | 100 | A | ||
| Diode - Inverter | ||||||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | |||
| Continuous DC Forward Current | IF | TC=100, Tvjmax=175 | 25 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 50 | A | ||
| Forward Voltage | VF | IF=25A, Tvj=25 | 2.0 | V | ||
| IF=25A, Tvj=125 | 1.87 | V | ||||
| IF=25A, Tvj=150 | 1.80 | V | ||||
| Recovered Charge | Qrr | IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=25 | 2.78 | μC | ||
| IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=150 | 3.79 | μC | ||||
| Peak Reverse Recovery Current | Irr | IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=25 | 18 | A | ||
| IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=150 | 19.0 | A | ||||
| Reverse Recovery Energy | Erec | IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=25 | 0.94 | mJ | ||
| IF=25A, VR=600V, -diF/dt=500A/μs, Tvj=150 | 1.38 | mJ | ||||
| I2t-value | I2t | VR=0,tp=10ms,Tvj=25 | 75 | A²s | ||
| VR=0,tp=10ms,Tvj=125 | 90 | A²s | ||||
| VR=0,tp=10ms,Tvj=150 | 120 | A²s | ||||
| IGBT - Brake-chopper | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Continuous Collector Current | IC | TC=100, Tvjmax=175 | 15 | A | ||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A | ||
| Gate-Emitter Voltage | VGES | ±20 | V | |||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 155 | W | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=0.5mA,Tvj=25 | 5.2 | 5.9 | 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1 | mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.90 | V | ||
| IC=15A,VGE=15V, Tvj=125 | 2.15 | V | ||||
| IC=15A,VGE=15V, Tvj=150 | 2.25 | V | ||||
| Gate Charge | Qg | VCE=600V, IC=15A, VGE=±15V, RG=39Ω, Tvj=25 | 0.09 | μC | ||
| Input Capacitance | Cies | VCE=25V,VGE=0V,f=1MHz, Tvj=25 | 1.35 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.08 | nF | |||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj=25 | 400 | nA | ||
| Turn-On Delay Time | td(on) | VCE=600V, IC=15A, VGE=±15V, RG=39Ω, Tvj=25 | 11 | ns | ||
| Rise Time | tr | 30 | ns | |||
| Turn-Off Delay Time | td(off) | 87 | ns | |||
| Fall Time | tf | 289 | ns | |||
| Turn-On Energy | Eon | 1.98 | mJ | |||
| Turn-Off Energy | Eoff | 0.91 | mJ | |||
| Turn-On Delay Time | td(on) | VCE=600V, IC=15A, VGE=±15V, RG=39Ω, Tvj=150 | 15 | ns | ||
| Rise Time | tr | 39 | ns | |||
| Turn-Off Delay Time | td(off) | 99 | ns | |||
| Fall Time | tf | 426 | ns | |||
| Turn-On Energy | Eon | 2.35 | mJ | |||
| Turn-Off Energy | Eoff | 1.29 | mJ | |||
| SC Data | ISC | Tp≤10μs,VGE=15V,Tvj=150°C, VCC=900V,VCEM≤1200V | 60 | A | ||
| Diode - Brake-chopper | ||||||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | |||
| Continuous DC Forward Current | IF | TC=100, Tvjmax=175 | 15 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 30 | A | ||
| Forward Voltage | VF | IF=15A, Tvj=25 | 2.0 | V | ||
| IF=15A, Tvj=125 | 1.8 | V | ||||
| IF=15A, Tvj=150 | 1.7 | V | ||||
| Recovered Charge | Qrr | IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=25 | 1.2 | μC | ||
| IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=150 | 1.6 | μC | ||||
| Peak Reverse Recovery Current | Irr | IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=25 | 10.0 | A | ||
| IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=150 | 15.0 | A | ||||
| Reverse Recovery Energy | Erec | IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=25 | 0.35 | mJ | ||
| IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=150 | 1.20 | mJ | ||||
| I2t-value | I2t | VR=0,tp=10ms,Tvj=25 | 30 | A²s | ||
| VR=0,tp=10ms,Tvj=125 | 40 | A²s | ||||
| VR=0,tp=10ms,Tvj=150 | 34 | A²s | ||||
| Diode - Rectifier | ||||||
| Repetitive Peak Reverse Voltage | VRRM | 1600 | V | |||
| Average On-state Current | IF(AV) | 50/60Hz, sine wave | A | |||
| Maximum RMS Current at Rectifier Output | IRMSM | A | ||||
| Surge Forward Current | IFSM | Tvj=25 | A | |||
| Diode Forward Voltage | VF | IF=25A,Tvj=125 | 1.02 | V | ||
| Reverse Current | IR | Tvj=125,VR=1600V | 2 | mA | ||
| I2t-value | I2t | VR=0,tp=10ms,Tj=25 | 680 | A²s | ||
| VR=0,tp=10ms,Tj=150 | 430 | A²s | ||||
| NTC-Thermistor | ||||||
| Rated Resistance | R25 | 5 | kΩ | |||
| Deviation of R100 | ΔR/R | TC=100,R100=493.3Ω | -5 | 5 | % | |
| Power Dissipation | P25 | 20 | mW | |||
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15K))] | 3375 | K | ||
| Module Characteristics (TC=25°C unless otherwise specified) | ||||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 175 | ||||
| Operating Junction Temperature | Tvj op | -40 | 150 | |||
| Storage Temperature | Tstg | -40 | 125 | |||
| Stray-Inductance-module | LsCE | 60 | nH | |||
| Module Lead Resistance , Terminal to Chip | TC=25, per switch | mΩ | ||||
| per IGBT-inverter | 0.90 | |||||
| per Diode-inverter | 1.2 | |||||
| per IGBT-brake-chopper | 1.2 | |||||
| per Diode-chopper | 1.5 | |||||
| per Diode-rectifier | 1.15 | |||||
| Thermal Resistance Junction to Case | Rθjc | TC=25, per switch | K/W | |||
| per IGBT-inverter | 0.33 | |||||
| per Diode-inverter | 0.46 | |||||
| per IGBT-brake-chopper | 0.46 | |||||
| per Diode-chopper | 0.70 | |||||
| per Diode-rectifier | 0.49 | |||||
| per Module | 0.02 | |||||
| Thermal Resistance Case to Sink | RθCS | K/W | ||||
| Module-to-Sink Torque | MS | 3 | 6 | N·m | ||
| Weight of Module | G | 180 | g | |||
Certifications
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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