| Pd - Power Dissipation | 210W |
| Td(off) | 90ns |
| Td(on) | 45ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 40pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V@250uA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 120nC@15V |
| Output Capacitance(Coes) | 70pF |
| Reverse Recovery Time(trr) | 420ns |
| Switching Energy(Eoff) | 650uJ |
| Turn-On Energy (Eon) | 2.5mJ |
| Description | IGBT 1.2kV 25A Through Hole TO-247 |
| Mfr. Part # | YGW25N120U2 |
| Package | TO-247 |
| Model Number | YGW25N120U2 |
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Product Specification
| Pd - Power Dissipation | 210W | Td(off) | 90ns |
| Td(on) | 45ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 40pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V@250uA |
| Operating Temperature | -40℃~+150℃ | Gate Charge(Qg) | 120nC@15V |
| Output Capacitance(Coes) | 70pF | Reverse Recovery Time(trr) | 420ns |
| Switching Energy(Eoff) | 650uJ | Turn-On Energy (Eon) | 2.5mJ |
| Description | IGBT 1.2kV 25A Through Hole TO-247 | Mfr. Part # | YGW25N120U2 |
| Package | TO-247 | Model Number | YGW25N120U2 |
The YGW25N120U2 is a 1200V / 25A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and short circuit withstand time. This IGBT is suitable for applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC Collector Current | IC | 25 | A | TC = 100C |
| Diode Forward Current | IF | 15 | A | TC = 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE=15V, VCE600V |
| Power Dissipation | Ptot | 210 | W | Tj=25 |
| Operating Junction Temperature | Tj | -40...+150 | C | |
| Storage Temperature | Ts | -55...+150 | C | |
| IGBT Thermal Resistance (junction-case) | R(j-c) | 0.61 | K/W | |
| Diode Thermal Resistance (junction-case) | R(j-c) | 1.2 | K/W | |
| Thermal Resistance (junction-ambient) | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 5.3 - 6.5 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 - 2.25 | V | VGE=15V, IC=25A, Tj = 25C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.45 | V | VGE=15V, IC=25A, Tj = 150C |
| Zero Gate Voltage Collector Current | ICES | 250 | A | VCE = 1200V, VGE = 0V, Tj = 25C |
| Zero Gate Voltage Collector Current | ICES | 1000 | A | VCE = 1200V, VGE = 0V, Tj = 150C |
| Gate-Emitter Leakage Current | IGES | 200 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=25A |
| Input Capacitance | Cies | 2800 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output Capacitance | Coes | 70 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Cres | 40 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Gate Charge | QG | 120 | nC | VCC = 960V, IC = 25A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Rise Time | tr | 40 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-on Energy | Eon | 2.5 | mJ | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off Delay Time | td(off) | 90 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Fall Time | tf | 95 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off Energy | Eoff | 0.65 | mJ | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Diode Forward Voltage | VFM | 3.1 | V | IF = 25A, Tj = 25C |
| Reverse Recovery Time | Trr | 420 | ns | IF= 25A, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 17 | A | IF= 25A, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Charge | Qrr | 2570 | nC | IF= 25A, di/dt= 600A/s, Tj = 25C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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