Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 1.154kW |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.81nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@1.5mA |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 800A |
| Switching Energy(Eoff) | 26.8mJ |
| Turn-On Energy (Eon) | 20.55mJ |
| Description | IGBT 650V 400A Screw Terminals |
| Mfr. Part # | LGM400HF65S4T1A |
| Package | Screw Terminals |
| Model Number | LGM400HF65S4T1A |
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Product Specification
| Pd - Power Dissipation | 1.154kW | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.81nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@1.5mA |
| Operating Temperature | -40℃~+150℃ | Pulsed Current- Forward(Ifm) | 800A |
| Switching Energy(Eoff) | 26.8mJ | Turn-On Energy (Eon) | 20.55mJ |
| Description | IGBT 650V 400A Screw Terminals | Mfr. Part # | LGM400HF65S4T1A |
| Package | Screw Terminals | Model Number | LGM400HF65S4T1A |
The LGM400HF65S4T1A is a 650V/400A IGBT module designed for high-power applications. It features a positive temperature coefficient for VCEsat, low switching losses, and a low inductance case. The module utilizes an isolated copper baseplate with DBC technology for efficient thermal management. It is ideal for use in welding machines, UPS systems, and motor drives.
| Parameter | Conditions | Symbol | Values | Units |
| IGBT, Inverter Maximum Rated Values | VCES | 650 | V | |
| IC nom (Tc = 70C, Tvj max = 175C) | IC | 400 | A | |
| ICRM (tP = 1 ms) | ICRM | 800 | A | |
| Ptot (TC = 25C, Tvj max = 175C) | Ptot | 1154 | W | |
| VGE peak | VCES | 20 | V | |
| IGBT, Inverter Characteristic Values | VCEsat (IC = 400A, VGE = 15 V, Tvj = 25C) | VCEsat | 1.55 | V |
| VGEth (IC = 1.5 mA, VCE = VGE, Tvj = 25C) | VGEth | 5.8 | V | |
| QG (VGE = -15 / 15 V) | QG | 4.2 | C | |
| Cies (f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V) | Cies | 24 | nF | |
| Cres | 0.81 | nF | ||
| ICES (VCE = 1200 V, VGE = 0 V, Tvj = 25C) | ICES | 1.0 | mA | |
| IGES (VCE = 0 V, VGE = 20 V, Tvj = 25C) | IGES | 400 | nA | |
| td on (IC = 400A, VCE = 300 V, VGE = -15 / 15 V, RG = 22) | td on | 0.58 | s | |
| tr | 0.35 | s | ||
| td off | 1.17 | s | ||
| tf | 0.13 | s | ||
| Eon (per pulse) | 20.55 | mJ | ||
| Eoff (per pulse) | 26.8 | mJ | ||
| RthJC (per IGBT) | 0.13 | K/W | ||
| RthCH (per IGBT) | 0.03 | K/W | ||
| Tvj op | -40 to 150 | C | ||
| Diode, Inverter Maximum Rated Values | VRRM | 650 | V | |
| IF nom | 400 | A | ||
| IFRM (tP = 1 ms) | IFRM | 800 | A | |
| VF (IF = 400 A, VGE = 0 V, Tvj = 25C) | VF | 1.76 | V | |
| Diode, Inverter Characteristic Values | IRR (IF = 400 A, VR = 300 V, VGE = -15 V, RG = 22, Tvj = 25C) | IRR | 107 | A |
| QRR | 7 | C | ||
| Erec | 1.01 | mJ | ||
| RthJC (per diode) | 0.2 | K/W | ||
| RthCH (per diode) | 0.06 | K/W | ||
| Tvj op | -40 to 150 | C | ||
| Module Maximum Rated Values | VISOL (RMS, f = 50 Hz, t = 1 min.) | VISOL | 2.5 | kV |
| Creepage distance (terminal to heatsink) | 29 | mm | ||
| Clearance (terminal to heatsink) | 23 | mm | ||
| CTI | 400 | |||
| LsCE | 20 | nH | ||
| RCC'+EE (TC = 25C, per switch) | 0.7 | m | ||
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting force per clamp | F | 3 to 6 | N | |
| Weight | G | 345 | g |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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