Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247 Single IGBTs RoHS |
| Mfr. Part # | MBQ75T65PEHTH |
| Package | TO-247 |
| Model Number | MBQ75T65PEHTH |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Description | TO-247 Single IGBTs RoHS | Mfr. Part # | MBQ75T65PEHTH |
| Package | TO-247 | Model Number | MBQ75T65PEHTH |
The MBQ75T65PEH is a 650V Field Stop Trench IGBT from Magnachip Semiconductor, designed with advanced technology for high performance, excellent quality, and superior ruggedness. It features a positive temperature coefficient for VCE(sat), a very soft and fast recovery anti-parallel diode, low EMI, and a maximum junction temperature of 175C. This IGBT is ideal for demanding applications such as PV inverters, UPS power systems, and welders, offering high ruggedness crucial for motor control applications.
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | 650 | V | |
| DC collector current, limited by Tvjmax | IC | 100 | A | TC=25C |
| DC collector current, limited by Tvjmax | IC | 75 | A | TC=100C |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 225 | A | |
| Diode forward current, limited by Tvjmax | IF | 80 | A | TC=25C |
| Diode forward current, limited by Tvjmax | IF | 50 | A | TC=100C |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 225 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | PD | 428 | W | TC=25C |
| Power dissipation | PD | 214 | W | TC=100C |
| Short circuit withstand time | tsc | 5 | s | VCC 360V, VGE = 15V, Tvj = 150C |
| Operating Junction temperature range | Tvj | -40~175 | C | |
| Storage temperature range | Tstg | -55~150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance junction-to-ambient | Rth(j-a) | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT | Rth(j-c) | 0.35 | ||
| Thermal resistance junction-to-case for Diode | Rth(j-c) | 0.70 | ||
| Ordering Information | ||||
| Part Number | Marking | Temp. Range | Package | Packing |
| MBQ75T65PEHTH | 75T65PEH | -55~175C | TO-247 | Tube |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | 650 | V | IC = 2mA, VGE = 0V |
| Collector-emitter saturation voltage | VCE(sat) | 1.7 | V | IC = 75A, VGE= 15V, Tvj = 25C |
| Collector-emitter saturation voltage | VCE(sat) | 2.2 | V | IC = 75A, VGE= 15V, Tvj = 175C |
| Diode forward voltage | VF | 1.55 | V | VGE = 0V, IF = 50A, Tvj = 25C |
| Diode forward voltage | VF | 1.6 | V | VGE = 0V, IF = 50A, Tvj = 175C |
| Gate-emitter threshold voltage | VGE(th) | 4.5 - 6.5 | V | VCE = VGE, IC = 1.2mA |
| Zero gate voltage collector current | ICES | 20 | A | VCE = 650V, VGE = 0V, Tvj = 25C |
| Gate-emitter leakage current | IGES | 100 | nA | VGE = 20V, VCE = 0V |
| Dynamic Characteristics | ||||
| Total gate charge | QG | 280 | nC | VCE = 520V, IC = 75A, VGE = 15V |
| Gate-emitter charge | QGE | 42 | nC | |
| Gate-collector charge | QGC | 114 | nC | |
| Input capacitance | Cies | 6500 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 230 | pF | |
| Reverse transfer capacitance | Cres | 158 | pF | |
| Switching Characteristics | ||||
| Turn-on delay time | td(on) | 38 | ns | VGE = -5/15V, VCC = 400V, IC = 75A, RG = 10, Inductive Load, Tvj = 25C |
| Rise time | tr | 192 | ns | |
| Turn-off delay time | td(off) | 156 | ns | |
| Fall time | tf | 103 | ns | |
| Turn-on switching energy | Eon | 4.69 | mJ | |
| Turn-off switching energy | Eoff | 1.75 | mJ | |
| Total switching energy | Ets | 6.44 | mJ | |
| Turn-on delay time | td(on) | 37 | ns | VGE = -5/15V, VCC = 400V, IC = 75A, RG = 10, Inductive Load, Tvj = 175C |
| Rise time | tr | 194 | ns | |
| Turn-off delay time | td(off) | 168 | ns | |
| Fall time | tf | 106 | ns | |
| Turn-on switching energy | Eon | 5.62 | mJ | |
| Turn-off switching energy | Eoff | 2.04 | mJ | |
| Total switching energy | Ets | 7.66 | mJ | |
| Reverse recovery time | trr | 181 | ns | IF = 50A, diF/dt = 200A/ s, Tvj = 25C |
| Reverse recovery current | Irr | 10.4 | A | |
| Reverse recovery charge | Qrr | 1.12 | C | |
| Reverse recovery time | trr | 384 | ns | IF = 50A, diF/dt = 200A/ s, Tvj = 175C |
| Reverse recovery current | Irr | 13.3 | A | |
| Reverse recovery charge | Qrr | 3.07 | C | |
| Physical Dimension | ||||
| Dimension | Min(mm) | Max(mm) | ||
| A | 4.70 | 5.31 | ||
| A1 | 2.20 | 2.60 | ||
| A2 | 1.50 | 2.49 | ||
| b | 0.99 | 1.40 | ||
| b1 | 2.59 | 3.43 | ||
| b2 | 1.65 | 2.39 | ||
| c | 0.38 | 0.89 | ||
| D | 20.30 | 21.46 | ||
| D1 | 13.08 | - | ||
| E | 15.45 | 16.26 | ||
| E1 | 13.06 | 14.02 | ||
| E2 | 4.32 | 5.49 | ||
| e | 5.45BSC | |||
| L | 19.81 | 20.57 | ||
| L1 | - | 4.50 | ||
| P | 3.50 | 3.70 | ||
| Q | 5.38 | 6.20 | ||
| S | 6.15BSC | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!