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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking
China Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking

  1. China Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking
  2. China Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking
  3. China Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking

Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking

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Drain to Source Voltage 650V
Current - Continuous Drain(Id) 92A
RDS(on) 20mΩ@18V
Operating Temperature - -55℃~+175℃
Gate Threshold Voltage (Vgs(th)) 2.6V
Type N-Channel
Number 1 N-channel
Pd - Power Dissipation 312W
Gate Charge(Qg) 187nC@40A
Description 650V 92A 20mΩ@18V 2.6V 1 N-channel 312W TO-247-4L Single FETs, MOSFETs RoHS
Mfr. Part # HSCM0020065K
Package TO-247-4L
Model Number HSCM0020065K

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 650V Current - Continuous Drain(Id) 92A
RDS(on) 20mΩ@18V Operating Temperature - -55℃~+175℃
Gate Threshold Voltage (Vgs(th)) 2.6V Type N-Channel
Number 1 N-channel Pd - Power Dissipation 312W
Gate Charge(Qg) 187nC@40A Description 650V 92A 20mΩ@18V 2.6V 1 N-channel 312W TO-247-4L Single FETs, MOSFETs RoHS
Mfr. Part # HSCM0020065K Package TO-247-4L
Model Number HSCM0020065K

Product Overview

The HSCM0020065K is an N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitances, and is easy to parallel and simple to drive. These characteristics lead to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies. It is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, and motor drives.

Product Attributes

  • Brand: 6GMK
  • Material: Silicon Carbide
  • Certification: UL 7
  • Package Type: TO-247-4L

Technical Specifications

SymbolParameterValueUnitTest Conditions
VDSmaxDrain-Source Voltage650VVGS=0V, ID=100A
VGSmaxGate-Source Voltage-8/+22VAbsolute maximum values
VGSopGate-Source Voltage-4/+18VRecommended operational values
IDContinuous Drain Current92AVGS=18V, Tc=25
IDContinuous Drain Current64AVGS=18V, Tc=100
ID(pulse)Pulsed Drain Current257APulse width tp limited by TJmax
TJ, TSTGOperating Junction and Storage Temperature-55 to +175
PDPower Dissipation312WTC=25C,TJ=175C
V(BR)DSSDrain-Source Breakdown Voltage650VVGS=0V, ID=100A
VGS(th)Gate Threshold Voltage2.0 / 2.6 / 4.0VVDS=VGS, ID=15mA
VGS(th)Gate Threshold Voltage/ 1.8 /VVDS=VGS, ID=15mA, TJ=175
IDSSZero Gate Voltage Drain Current/ 1 / 100AVDS=650V, VGS=0V
IGSS+Gate-Source Leakage Current/ 10 / 250nAVDS=0V, VGS=22V
IGSS-Gate-Source Leakage Current/ 10 / 250nAVDS=0V, VGS=-8V
RDS(on)Drain-Source On-State Resistance/ 20 / 30mVGS=18V, ID=50A
RDS(on)Drain-Source On-State Resistance/ 28 /mVGS=18V, ID=50A, TJ=175
gfsTransconductance/ 35 /SVDS=20V, ID=50A
gfsTransconductance/ 31.6 /SVDS=20V, ID=50A, TJ=175
CissInput Capacitance/ 3180 /pFVGS=0V, VDS=650V, f=1MHz, VAC=25mV
CossOutput Capacitance/ 281 /pFf=1MHz, VAC=25mV
CrssReverse Transfer Capacitance/ 33 /pFf=1MHz, VAC=25mV
EossCoss Stored Energy/ 41 /J
RG(int)Internal Gate Resistance/ 3.2 /
QGSGate to Source Charge/ 49 /nCVDS=400V, VGS=-4V/18V, ID=40A
QGDGate to Drain Charge/ 31 /nCVDS=400V, VGS=-4V/18V, ID=40A
QGTotal Gate Charge/ 187 /nCVDS=400V, VGS=-4V/18V, ID=40A
VSDDiode Forward Voltage4.2 /VVGS=-4V, ISD=25A
VSDDiode Forward Voltage3.9 /VVGS=-4V, ISD=25A, TJ=175
ISContinuous Diode Forward Current/ 92ATC=25
trrReverse Recover Time26 /nsVR=400V, ISD=40A
QrrReverse Recovery Charge58 /nCVR=400V, ISD=40A
IrrmPeak Reverse Recovery Current3.4 /AVR=400V, ISD=40A
RJCThermal Resistance from Junction to Case0.48/W
RJAThermal Resistance From Junction to Ambient40/W
td(on)Turn-On Delay Time/ / 12nsVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175
trRise Time/ / 18nsVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175
td(off)Turn-Off Delay Time/ / 25nsVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175
tfFall Time/ / 8nsVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175
EonTurn-On Switching Energy/ 121 /JVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175
EoffTurn-Off Switching Energy/ 53 /JVDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175

2508201709_Huixin-HSCM0020065K_C49823493.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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