Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 100mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Pd - Power Dissipation | 188W |
| Output Capacitance(Coss) | 62pF |
| Input Capacitance(Ciss) | 1.377nF |
| Gate Charge(Qg) | 58nC |
| Description | 1.2kV 35A 100mΩ 4V 188W TO-220 Single FETs, MOSFETs RoHS |
| Mfr. Part # | ADP120N080G2 |
| Package | TO-220 |
| Model Number | ADP120N080G2 |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 100mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | Pd - Power Dissipation | 188W |
| Output Capacitance(Coss) | 62pF | Input Capacitance(Ciss) | 1.377nF |
| Gate Charge(Qg) | 58nC | Description | 1.2kV 35A 100mΩ 4V 188W TO-220 Single FETs, MOSFETs RoHS |
| Mfr. Part # | ADP120N080G2 | Package | TO-220 |
| Model Number | ADP120N080G2 |
This series of 1200V N-Channel Silicon Carbide Power MOSFETs, including models ADQ120N080G2, ADW120N080G2, ADG120N080G2, ADP120N080G2, and ADA120N080G2, offers low drain-source on-resistance (RDS(ON) = 80m typ.) and easy gate control with enhancement mode operation (Vth = 2 to 4 V). These devices are suitable for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters.
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ADQ120N080G2 | TO-247-4L | 1200 | 100 | 58 | 94 |
| ADW120N080G2 | TO-247-3L | 1200 | 100 | 58 | 94 |
| ADG120N080G2 | TO-263-7L | 1200 | 100 | 58 | 94 |
| ADP120N080G2 | TO-220 | 1200 | 100 | 58 | 94 |
| ADA120N080G2 | TO-220F | 1200 | 100 | 58 | 94 |
| Parameter | Symbol | Values (Unit) | Note / Test Condition |
|---|---|---|---|
| Continuous drain current | ID | - - 35 A (TC=25C) / - - 26 A (TC=100C) | Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Avalanche energy, single pulse | EAS | - - 200 mJ | Tc=25,VDD=50V,L=1mH, RG=25 |
| Gate source voltage (static) | VGS | -5 - 20 V | static |
| Power dissipation | Ptot | - - 188 W (TC=25C) | Derating factor above 25C - - 1.9 W/C |
| Storage temperature | Tstg | -55 - 175 C | |
| Operating junction temperature | Tj | -55 - 175 C | |
| Soldering Temperature | TL | 300 C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | - 8.33 S (VDS=20V, IDS=20A) / 7.14 S (VDS=20V, IDS=20A, Tj=150C) | |
| Drain-source breakdown voltage | V(BR)DSS | 1200 V | VGS=0V, ID=1mA |
| Gate threshold voltage | V(GS)th | 2.0 2.8 4.0 V | VDS=VGS, ID=10mA |
| Zero gate voltage drain current | IDSS | - - 1 uA | VDS=1200V, VGS=0V |
| Gate-source leakage current | IGSS+ | - - 100 nA | VGS=20V, VDS=0V |
| Gate-source leakage current | IGSS- | - - -100 nA | VGS=-5V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 80 100 m (VGS=20V, ID=20A, Tj=25C) / 93.1 m (VGS=20V, ID=20A, Tj=150C) | |
| Gate resistance (Intrinsic) | RG | - 4.5 | f=1MHz, open drain |
| Input capacitance | Ciss | - 1377 pF | VGS=0V, VDS=1000V, f=200KHz |
| Output capacitance | Coss | - 62 pF | VGS=0V, VDS=1000V, f=200KHz |
| Reverse transfer capacitance | Crss | - 4 pF | VGS=0V, VDS=1000V, f=200KHz |
| Turn-on delay time | td(on) | - 10 ns | VDD=800V, VGS=20V, ID=20A,RG=0; TJ =25 |
| Rise time | tr | - 6 ns | |
| Turn-off delay time | td(off) | - 16 ns | |
| Fall time | tf | - 10 ns | |
| Turn-on Switching Energy | Eon | 748.8 uJ | |
| Turn-off Switching Energy | Eoff | 31.2 uJ | |
| Gate to source charge | Qgs | - 18 nC | VDD=800V, ID=20A, VGS=20V |
| Gate to drain charge | Qg | - 17 nC | VDD=800V, ID=20A, VGS=20V |
| Gate charge total | Qg | - 58 nC | VDD=800V, ID=20A, VGS=20V |
| Continuous Source Current | ISD | - - 35 A | |
| Diode forward voltage | VSD | - 3.8 V | IS=10A, VGS=0V, Tj=25C |
| Reverse recovery time | trr | - 57 ns | VDD=800VID=20A, +VGS =+15V, -VGS=-4V dif/dt=1000A/s LLoad=500uHRg=0TJ =25 |
| Reverse recovery charge | Qrr | - 195 nC | |
| Peak reverse recovery current | Irrm | - 6.84 A |
| Package | Thermal resistance, junction - case (RthJC) (C/W) | Thermal resistance, junction - ambient (RthJA) (C/W) |
|---|---|---|
| TO247 & TO220 | 0.65 - 0.8 | 40 (device on PCB, minimal footprint) |
| TO263-7L | - - 1.0 | 62 (device on PCB, minimal footprint) |
| TO220F | - - 5 | 60 (device on PCB, minimal footprint) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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