Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 3.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 505pF |
| Input Capacitance(Ciss) | 7.93nF@25V |
| Pd - Power Dissipation | 138W |
| Gate Charge(Qg) | 146nC |
| Description | P-Channel 30V 100A 138W Surface Mount PDFN5x6-8 |
| Mfr. Part # | MSH30P100 |
| Package | PDFN5x6-8 |
| Model Number | MSH30P100 |
View Detail Information
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 3.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 505pF | Input Capacitance(Ciss) | 7.93nF@25V |
| Pd - Power Dissipation | 138W | Gate Charge(Qg) | 146nC |
| Description | P-Channel 30V 100A 138W Surface Mount PDFN5x6-8 | Mfr. Part # | MSH30P100 |
| Package | PDFN5x6-8 | Model Number | MSH30P100 |
The MSH30P100 is a P-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. The device is designed for applications requiring efficient power management, including motor drivers, POL applications, load switches, and LED drivers.
| MSH30P100 P-Channel 30-V (D-S) MOSFET | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Value | Units |
| Features | ||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS =-10V, ID =-30A | 3.3 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-20A | 5.0 | m |
| Fast switching | ||||
| Suit for -4.5V Gate Drive Applications | ||||
| EAS | 100% EAS Guaranteed | |||
| Typical Applications | ||||
| Motor Driver Applications | ||||
| POL Applications | ||||
| Load Switch | ||||
| LED Applications | ||||
| Maximum Ratings | ||||
| VDS | Drain-Source Voltage | -30 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Continuous Drain Current (TC =25C) | -100 | A | |
| ID | Continuous Drain Current (TC =100C) | -63.2 | A | |
| IDM | Pulsed Drain Current | (Pulse width 300s, duty cycle 2%) | -400 | A |
| IAS | Single Pulse Avalanche Current (L =0.1mH) | -80 | A | |
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 320 | mJ | |
| PD | Power Dissipation (TC =25C) | 138 | W | |
| PD | Power Dissipation (TA =25C) | 2 | W | |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to +150 | C | |
| Thermal Resistance Ratings | ||||
| RJA | Maximum Junction-to-Ambient | (Tested on 1 inch FR-4 board with 2OZ copper) | 62.5 | C/W |
| RJC | Maximum Junction-to-Case | (Tested on 1 inch FR-4 board with 2OZ copper) | 0.9 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250A | -1.2 to -2.2 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250A | -30 | V |
| gfs | Forward Transconductance | VDS =-10V, ID =-3A | 20 | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =-30V, VGS =0V, TJ =25C | -1 | A |
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =125C | -10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-30A | 2.7 to 3.3 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-20A | 4.0 to 5.0 | m |
| EAS | Single Pulse Avalanche Energy | VDD =-25V, L =0.1mH, IAS =-30A | 45 | mJ |
| VSD | Diode Forward Voltage | IS =-30A, VGS =0V, TJ =25C | -1.2 | V |
| IS | Continuous Source Current | -100 | A | |
| ISM | Pulsed Source Current | VG =VD =0V, Force Current | -200 | A |
| Dynamic Characteristics | ||||
| Qg | Total Gate Charge | VDS =-24V, ID =-10A, VGS =-10V | 146 | nC |
| Qgs | Gate-Source Charge | VDS =-24V, ID =-10A, VGS =-10V | 22 | nC |
| Qgd | Gate-Drain Charge | VDS =-24V, ID =-10A, VGS =-10V | 32 | nC |
| td(on) | Turn-On Delay Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 17 | ns |
| tr | Rise Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 61 | ns |
| td(off) | Turn-Off Delay Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 200 | ns |
| tf | Fall Time | VDS =-15V, ID =-10A, VGS =-10V, RG =5 | 113 | ns |
| CISS | Input Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 7930 | pF |
| COSS | Output Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 983 | pF |
| CRSS | Reverse Transfer Capacitance | VDS =-25V, VGS =0V, f =1.0MHz | 505 | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 3.6 | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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