| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 92A |
| RDS(on) | 20mΩ@18V |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | N-Channel |
| Number | 1 N-channel |
| Pd - Power Dissipation | 312W |
| Gate Charge(Qg) | 187nC@40A |
| Description | 650V 92A 20mΩ@18V 2.6V 1 N-channel 312W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | HSCM0020065K |
| Package | TO-247-4L |
| Model Number | HSCM0020065K |
View Detail Information
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 92A |
| RDS(on) | 20mΩ@18V | Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | Type | N-Channel |
| Number | 1 N-channel | Pd - Power Dissipation | 312W |
| Gate Charge(Qg) | 187nC@40A | Description | 650V 92A 20mΩ@18V 2.6V 1 N-channel 312W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | HSCM0020065K | Package | TO-247-4L |
| Model Number | HSCM0020065K |
The HSCM0020065K is an N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitances, and is easy to parallel and simple to drive. These characteristics lead to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies. It is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, and motor drives.
| Symbol | Parameter | Value | Unit | Test Conditions |
| VDSmax | Drain-Source Voltage | 650 | V | VGS=0V, ID=100A |
| VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values |
| VGSop | Gate-Source Voltage | -4/+18 | V | Recommended operational values |
| ID | Continuous Drain Current | 92 | A | VGS=18V, Tc=25 |
| ID | Continuous Drain Current | 64 | A | VGS=18V, Tc=100 |
| ID(pulse) | Pulsed Drain Current | 257 | A | Pulse width tp limited by TJmax |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ||
| PD | Power Dissipation | 312 | W | TC=25C,TJ=175C |
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS=0V, ID=100A |
| VGS(th) | Gate Threshold Voltage | 2.0 / 2.6 / 4.0 | V | VDS=VGS, ID=15mA |
| VGS(th) | Gate Threshold Voltage | / 1.8 / | V | VDS=VGS, ID=15mA, TJ=175 |
| IDSS | Zero Gate Voltage Drain Current | / 1 / 100 | A | VDS=650V, VGS=0V |
| IGSS+ | Gate-Source Leakage Current | / 10 / 250 | nA | VDS=0V, VGS=22V |
| IGSS- | Gate-Source Leakage Current | / 10 / 250 | nA | VDS=0V, VGS=-8V |
| RDS(on) | Drain-Source On-State Resistance | / 20 / 30 | m | VGS=18V, ID=50A |
| RDS(on) | Drain-Source On-State Resistance | / 28 / | m | VGS=18V, ID=50A, TJ=175 |
| gfs | Transconductance | / 35 / | S | VDS=20V, ID=50A |
| gfs | Transconductance | / 31.6 / | S | VDS=20V, ID=50A, TJ=175 |
| Ciss | Input Capacitance | / 3180 / | pF | VGS=0V, VDS=650V, f=1MHz, VAC=25mV |
| Coss | Output Capacitance | / 281 / | pF | f=1MHz, VAC=25mV |
| Crss | Reverse Transfer Capacitance | / 33 / | pF | f=1MHz, VAC=25mV |
| Eoss | Coss Stored Energy | / 41 / | J | |
| RG(int) | Internal Gate Resistance | / 3.2 / | ||
| QGS | Gate to Source Charge | / 49 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| QGD | Gate to Drain Charge | / 31 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| QG | Total Gate Charge | / 187 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| VSD | Diode Forward Voltage | 4.2 / | V | VGS=-4V, ISD=25A |
| VSD | Diode Forward Voltage | 3.9 / | V | VGS=-4V, ISD=25A, TJ=175 |
| IS | Continuous Diode Forward Current | / 92 | A | TC=25 |
| trr | Reverse Recover Time | 26 / | ns | VR=400V, ISD=40A |
| Qrr | Reverse Recovery Charge | 58 / | nC | VR=400V, ISD=40A |
| Irrm | Peak Reverse Recovery Current | 3.4 / | A | VR=400V, ISD=40A |
| RJC | Thermal Resistance from Junction to Case | 0.48 | /W | |
| RJA | Thermal Resistance From Junction to Ambient | 40 | /W | |
| td(on) | Turn-On Delay Time | / / 12 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| tr | Rise Time | / / 18 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| td(off) | Turn-Off Delay Time | / / 25 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| tf | Fall Time | / / 8 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| Eon | Turn-On Switching Energy | / 121 / | J | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| Eoff | Turn-Off Switching Energy | / 53 / | J | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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