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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS
China Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS

  1. China Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS

Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 180A
Operating Temperature - -55℃~+175℃@(Tj)
RDS(on) 4.3mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 319pF@50V
Number 1 N-channel
Input Capacitance(Ciss) 7.409nF@50V
Pd - Power Dissipation 348W
Gate Charge(Qg) 159.2nC@10V
Description 100V 180A 4.3mΩ@10V,50A 2V 1 N-channel 348W TO-220FB-3L Single FETs, MOSFETs RoHS
Mfr. Part # HY3810NA2P
Package TO-220FB-3L
Model Number HY3810NA2P

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 180A
Operating Temperature - -55℃~+175℃@(Tj) RDS(on) 4.3mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)) 2V Reverse Transfer Capacitance (Crss@Vds) 319pF@50V
Number 1 N-channel Input Capacitance(Ciss) 7.409nF@50V
Pd - Power Dissipation 348W Gate Charge(Qg) 159.2nC@10V
Description 100V 180A 4.3mΩ@10V,50A 2V 1 N-channel 348W TO-220FB-3L Single FETs, MOSFETs RoHS Mfr. Part # HY3810NA2P
Package TO-220FB-3L Model Number HY3810NA2P

Product Overview

The HY3810NA2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (100V) and current (180A) capabilities, a low on-resistance of 4.3m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This product is available in lead-free and green (RoHS compliant) versions, suitable for demanding applications like Uninterruptible Power Supplies and Motor Control.

Product Attributes

  • Brand: HUAYI
  • Model: HY3810NA2P/B
  • Certifications: RoHS Compliant, Lead-Free, Green (Lead-free and halogen-free)
  • Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (for lead-free products)

Technical Specifications

Parameter Test Conditions HY3810NA2 Unit Min Typ. Max
Absolute Maximum Ratings
Drain-Source Voltage (VDSS) Tc=25C Unless Otherwise Noted V - - 100
Gate-Source Voltage (VGSS) Tc=25C Unless Otherwise Noted V - - ±25
Maximum Junction Temperature (TJ) Tc=25C Unless Otherwise Noted °C -55 - 175
Storage Temperature Range (TSTG) Tc=25C Unless Otherwise Noted °C -55 - 175
Source Current-Continuous (IS) Body Diode, Tc=25°C, Mounted on Large Heat Sink A - - 180
Pulsed Drain Current (IDM) Tc=25°C A - - 590
Continuous Drain Current (ID) Tc=25°C A - - 180
Continuous Drain Current (ID) Tc=100°C A - - 127
Maximum Power Dissipation (PD) Tc=25°C W - - 348
Maximum Power Dissipation (PD) Tc=100°C W - - 174
Thermal Resistance, Junction-to-Case (RθJC) - °C/W - 0.43 -
Thermal Resistance, Junction-to-Ambient (RθJA) Surface mounted on FR-4 board. °C/W - 62 -
Single Pulsed-Avalanche Energy (EAS) L=0.3mH mJ - 856.5 -
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS=0V,IDS=250μA V 100 - -
Drain-to-Source Leakage Current (IDSS) VDS=100V,VGS=0V μA - - 1.0
Drain-to-Source Leakage Current (IDSS) TJ=125°C μA - - 50
Gate Threshold Voltage (VGS(th)) VDS=VGS, IDS=250μA V 2 3 4
Gate-Source Leakage Current (IGSS) VGS=±20V,VDS=0V nA - - ±100
Drain-Source On-State Resistance (RDS(ON)) VGS=10V,IDS=50A mΩ - 4.3 5.5
Diode Forward Voltage (VSD) ISD=50A,VGS=0V V - 0.86 1.3
Reverse Recovery Time (trr) ISD=50A,dISD/dt=100A/μs ns - 45.9 -
Reverse Recovery Charge (Qrr) - nC - 91.7 -
Gate Resistance (RG) VGS=0V,VDS=0V,F=1MHz Ω - 1.5 -
Input Capacitance (Ciss) VGS=0V, VDS=50V, Frequency=1.0MHz pF - 7409 -
Output Capacitance (Coss) - pF - 556 -
Reverse Transfer Capacitance (Crss) - pF - 319 -
Turn-on Delay Time (td(ON)) VDD=50V,RG=2.5Ω, IDS=50A,VGS=10V ns - 26.4 -
Turn-on Rise Time (Tr) - ns - 97.3 -
Turn-off Delay Time (td(OFF)) - ns - 64.2 -
Turn-off Fall Time (Tf) - ns - 102.7 -
Total Gate Charge (Qg) VDS=80V, VGS=10V, ID=50A nC - 159.2 -
Gate-Source Charge (Qgs) - nC - 41.5 -
Gate-Drain Charge (Qgd) - nC - 58.9 -

2411220146_HUAYI-HY3810NA2P_C721440.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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