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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching
China Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching

  1. China Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching

Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 55A
RDS(on) 11mΩ@10V
Operating Temperature - -55℃~+175℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 198pF
Output Capacitance(Coss) 290pF
Input Capacitance(Ciss) 4.66nF
Pd - Power Dissipation 75W
Gate Charge(Qg) 95nC@10V
Description 60V 55A 11mΩ@10V 2.5V@250uA 75W PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Mfr. Part # HYG120P06LR1C2
Package PDFN-8L(5x6)
Model Number HYG120P06LR1C2

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 55A
RDS(on) 11mΩ@10V Operating Temperature - -55℃~+175℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 198pF Output Capacitance(Coss) 290pF
Input Capacitance(Ciss) 4.66nF Pd - Power Dissipation 75W
Gate Charge(Qg) 95nC@10V Description 60V 55A 11mΩ@10V 2.5V@250uA 75W PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Mfr. Part # HYG120P06LR1C2 Package PDFN-8L(5x6)
Model Number HYG120P06LR1C2

Product Overview

The HYG120P06LR1C2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and battery management. It features a low on-state resistance (RDS(ON)) of 11 m (typ.) at VGS = -10V and 15.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Package Type: PDFN5*6-8L
  • Certifications: RoHS Compliant, Halogen Free, Green Devices Available
  • Material: Matte tin plate termination finish

Technical Specifications

ParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
Drain-Source Voltage (VDSS)-60V
Gate-Source Voltage (VGSS)20V
Junction Temperature Range (TJ)-55175C
Storage Temperature Range (TSTG)-55175C
Drain Current-Continuous (IS)Tc=25C-55A
Pulsed Drain Current (IDM)Tc=25C-210A
Continuous Drain Current (ID)Tc=25C-55A
Continuous Drain Current (ID)Tc=100C-38.8A
Maximum Power Dissipation (PD)Tc=25C75W
Maximum Power Dissipation (PD)Tc=100C37.5W
Thermal Resistance, Junction-to-Case (RJC)2C/W
Thermal Resistance, Junction-to-Ambient (RJA)**Surface mounted on FR-4 board.110C/W
Single Pulsed-Avalanche Energy (EAS)***L=0.3mH, starting TJ=25C, RG= 25, VGS = -10V.212mJ
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS)VGS=0V,IDS=-250uA-60V
Drain-to-Source Leakage Current (IDSS)VDS=-60V, VGS=0V-1uA
Drain-to-Source Leakage Current (IDSS)TJ=125C, VDS=-60V, VGS=0V-50uA
Gate Threshold Voltage (VGS(th))VDS=VGS, IDS=-250uA-1.2-1.7-2.5V
Gate-Source Leakage Current (IGSS)VGS=20V,VDS=0V100nA
Drain-Source On-state Resistance (RDS(ON))VGS=-10V,ID= -20A1115m
Drain-Source On-state Resistance (RDS(ON))VGS=-4.5V,ID= -20A15.520m
Diode Forward Voltage (VSD)ISD= -20A,VGS=0V-0.83-1.2V
Reverse Recovery Time (trr)ISD= -20A,dI/dt=100A/us19.5ns
Reverse Recovery Charge (Qrr)ISD= -20A,dI/dt=100A/us16nC
Dynamic Characteristics
Gate Resistance (RG)VGS=0V,VDS=0V ,F=1MHz12
Input Capacitance (Ciss)VGS=0V, VDS=-25V, Frequency=1.0MHz4660pF
Output Capacitance (Coss)VGS=0V, VDS=-25V, Frequency=1.0MHz290pF
Reverse Transfer Capacitance (Crss)VGS=0V, VDS=-25V, Frequency=1.0MHz198pF
Turn-on Delay Time (td(ON))VDD= -30V,RG=4, IDS= -20A,VGS=-10V10ns
Turn-on Rise Time (Tr)VDD= -30V,RG=4, IDS= -20A,VGS=-10V48ns
Turn-off Delay Time (td(OFF))VDD= -30V,RG=4, IDS= -20A,VGS=-10V173ns
Turn-off Fall Time (Tf)VDD= -30V,RG=4, IDS= -20A,VGS=-10V83ns
Gate Charge Characteristics
Total Gate Charge (Qg)VDS = -48V, VGS=-10V, ID= -20A95nC
Total Gate Charge (Qg)VDS = -48V, VGS=-4.5V, ID= -20A47nC
Gate-Source Charge (Qgs)VDS = -48V, VGS=-10V, ID= -20A19nC
Gate-Drain Charge (Qgd)VDS = -48V, VGS=-10V, ID= -20A21nC

2411220211_HUAYI-HYG120P06LR1C2_C2943994.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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