Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -40℃~+175℃ |
| RDS(on) | 21mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Output Capacitance(Coss) | 289pF |
| Input Capacitance(Ciss) | 5.011nF |
| Pd - Power Dissipation | 416W |
| Gate Charge(Qg) | 188nC |
| Description | 650V 120A 416W Through Hole TO-247-4L |
| Mfr. Part # | HC3M0015065K |
| Package | TO-247-4L |
| Model Number | HC3M0015065K |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -40℃~+175℃ | RDS(on) | 21mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Output Capacitance(Coss) | 289pF | Input Capacitance(Ciss) | 5.011nF |
| Pd - Power Dissipation | 416W | Gate Charge(Qg) | 188nC |
| Description | 650V 120A 416W Through Hole TO-247-4L | Mfr. Part # | HC3M0015065K |
| Package | TO-247-4L | Model Number | HC3M0015065K |
The HC3M0015065K is a 3rd generation SiC MOSFET featuring an N-Channel Enhancement Mode design. Optimized for high-efficiency power conversion, it offers high blocking voltage with low on-resistance and high-speed switching capabilities. Its advanced technology reduces switching losses, minimizes gate ringing, and allows for increased power density and system switching frequency. The device is suitable for demanding applications such as EV chargers, solar inverters, UPS, SMPS, and DC/DC converters.
| Symbol | Parameter | Value | Unit | Note |
| Maximum Ratings | ||||
| VDSmax | Drain - Source Voltage | 650 | V | |
| VGSmax | Gate - Source voltage | -8/+19 | V | Note 1 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 25C | 120 | A | Fig. 19, Note 2 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 100C | 96 | A | |
| ID(pulse) | Pulsed Drain Current, Pulse width tP limited by Tjmax | 418 | A | |
| PD | Power Dissipation, TC=25C, TJ = 175 C | 416 | W | Fig. 20 |
| TJ , Tstg | Operating Junction and Storage Temperature | -40 to +175 | C | |
| TL | Solder Temperature, 1.6mm (0.063) from case for 10s | 260 | C | |
| Md | Mounting Torque, (M3 or 6-32 screw) | 1 | Nm | lbf-in |
| Electrical Characteristics | ||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0 V, ID = 100 A |
| VGS(th) | Gate Threshold Voltage | 1.8 / 2.3 / 3.6 | V | VDS = VGS, ID = 15.5 mA, Fig. 11 (TJ=25C / TJ=175C) |
| IDSS | Zero Gate Voltage Drain Current | 1 / 50 | A | VDS = 650 V, VGS = 0 V (Typ./Max.) |
| IGSS | Gate-Source Leakage Current | 10 / 250 | nA | VGS = 15 V, VDS = 0 V (Typ./Max.) |
| RDS(on) | Drain-Source On-State Resistance | 10.5 / 15 / 21 | m | VGS = 15 V, ID = 55.8A, Fig. 4, 5,6 (TJ=25C / TJ=175C) |
| gfs | Transconductance | 42 / 40 | S | VDS= 20 V, IDS= 55.8 A, Fig. 7 (TJ=25C / TJ=175C) |
| Ciss | Input Capacitance | 5011 | pF | VGS = 0 V, VDS = 400 V f = 100 Khz VAC = 25 mV Fig. 17, 18 |
| Coss | Output Capacitance | 289 | pF | |
| Crss | Reverse Transfer Capacitance | 31 | pF | |
| Co(er) | Effective Output Capacitance (Energy Related) | 357 | pF | Note: 3 |
| Co(tr) | Effective Output Capacitance (Time Related) | 516 | pF | Note: 3 |
| Eoss | Coss Stored Energy | 29 | J | Fig. 16 |
| EON | Turn-On Switching Energy (Body Diode) | 401 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = Internal Body Diode of MOSFET Fig. 25 |
| EOFF | Turn Off Switching Energy (Body Diode) | 254 | J | |
| EON | Turn-On Switching Energy (External Diode) | 234 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = External SiC DIODE Fig. 25 |
| EOFF | Turn Off Switching Energy (External Diode) | 303 | J | |
| td(on) | Turn-On Delay Time | 23 | ns | VDD = 400 V, VGS = -4 V/15 V ID = 55.8 A, RG(ext) = 5 , L= 57.6 H Timing relative to VDS Inductive load Fig. 26 |
| tr | Rise Time | 32 | ns | |
| td(off) | Turn-Off Delay Time | 57 | ns | |
| tf | Fall Time | 15 | ns | |
| RG(int) | Internal Gate Resistance | 1.5 | f = 1 MHz, VAC= 25 mV | |
| Qgs | Gate to Source Charge | 53 | nC | VDS = 400 V, VGS = -4 V/15 V ID = 55.8 A Per IEC60747-8-4 pg 21 Fig. 12 |
| Qgd | Gate to Drain Charge | 58 | nC | |
| Qg | Total Gate Charge | 188 | nC | |
| Reverse Diode Characteristics | ||||
| VSD | Diode Forward Voltage | 4.7 / 4.2 | V | VGS = -4 V, ISD = 27.9 A, TJ = 25 C / TJ = 175 C Fig. 8, 9, 10 |
| IS | Continuous Diode Forward Current | 79 | A | VGS = -4 V, TC = 25C |
| IS, pulse | Diode pulse Current | 223 | A | VGS = -4 V, pulse width tP limited by Tjmax |
| trr | Reverse Recover time | 22 / 26 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Qrr | Reverse Recovery Charge | 510 / 432 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Irrm | Peak Reverse Recovery Current | 39 / 28 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Thermal Characteristics | ||||
| RJC | Thermal Resistance from Junction to Case | 0.35 | C/W | Fig. 21 |
| RJA | Thermal Resistance From Junction to Ambient | 40 | C/W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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