Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| RDS(on) | 160mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | 1 N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Output Capacitance(Coss) | - |
| Input Capacitance(Ciss) | - |
| Pd - Power Dissipation | 75W |
| Gate Charge(Qg) | - |
| Description | 10A 160mΩ@6V 1.6V 75W DFN-8(8x8) Single FETs, MOSFETs RoHS |
| Mfr. Part # | HIGLD60R190D1 |
| Package | DFN-8(8x8) |
| Model Number | HIGLD60R190D1 |
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Product Specification
| Drain to Source Voltage | - | Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - | RDS(on) | 160mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | Type | 1 N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | - | Output Capacitance(Coss) | - |
| Input Capacitance(Ciss) | - | Pd - Power Dissipation | 75W |
| Gate Charge(Qg) | - | Description | 10A 160mΩ@6V 1.6V 75W DFN-8(8x8) Single FETs, MOSFETs RoHS |
| Mfr. Part # | HIGLD60R190D1 | Package | DFN-8(8x8) |
| Model Number | HIGLD60R190D1 |
The HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high switching frequency, no reverse-recovery charge, and low gate/output charge. This transistor is qualified for industrial applications according to JEDEC Standards and features ESD safeguard. It is RoHS, Pb-free, and REACH-compliant. Key applications include AC-DC converters, DC-DC converters, Totem pole PFC, fast battery charging, high-density power conversion, and high-efficiency power conversion.
| Parameters | Symbols | Values | Units | Notes/Test Conditions | ||
| Drain-source voltage, max | VDS, max | - | 650 | V | VGS = 0 V, ID = 10 A | |
| Drain-source voltage transient | VDS, transient | - | 750 | V | VGS = 0 V, VDS = 750 V, tPulse < 1 s | |
| Continuous current, drain-source | ID | - | 10 | A | Tc = 25 oC | |
| Pulsed current, drain-source | ID, pulse | - | 18 | A | Tc = 25 oC; VG = 6 V; Pulse width = 10 s | |
| Pulsed current, drain-source | ID, pulse | - | 10 | A | Tc = 125 oC; VG = 6 V; Pulse width = 10 s | |
| Gate-source voltage, continuous | VGS | -1.4 | +7 | V | Tj = -55 oC to 150 oC | |
| Gate-source voltage, pulsed | VGS, pulse | - | +10 | V | Tj = -55 oC to 150 oC; tPulse = 50 ns, f = 100 kHz; open drain | |
| Power dissipation | Ptot | - | 75 | W | Tc = 25 oC | |
| Operating temperature | Tj | -55 | +150 | oC | ||
| Storage temperature | Tstg | -55 | +150 | oC | ||
| Thermal resistance, junction-case | RthJC | - | 1.65 | oC/W | ||
| Reflow soldering temperature | Tsold | - | 260 | oC | MSL3 | |
| Gate threshold voltage | VGS(TH) | 1.2 | 2.5 | V | ID = 11 mA; VDS = VGS; Tj = 25 oC | |
| Gate threshold voltage | VGS(TH) | - | 1.6 | - | ID = 11 mA; VDS = VGS; Tj = 125 oC | |
| Drain-source leakage current | IDSS | - | 0.4 | 20 | A | VDS = 650 V; VGS = 0 V; Tj = 25 oC |
| Drain-source leakage current | IDSS | - | 4 | - | VDS = 650 V; VGS = 0 V; Tj = 125 oC | |
| Gate-source leakage current | IGSS | - | - | 200 | A | VGS = 6 V; VDS = 0 V |
| Drain-source on-state resistance | RDS(on) | - | 160 | 200 | m | VGS = 6 V; ID = 3 A; Tj = 25 oC |
| Drain-source on-state resistance | RDS(on) | - | 330 | - | m | VGS = 6 V; ID = 3 A; Tj = 125 oC |
| Gate resistance | RG | - | 3.5 | - | f = 5 MHz; open drain | |
| Input capacitance | Ciss | - | 83 | - | pF | VGS = 0 V; VDS = 400 V; f = 100 kHz |
| Output capacitance | Coss | - | 27 | - | pF | VGS = 0 V; VDS = 400 V; f = 100 kHz |
| Reverse transfer capacitance | Crss | - | 0.4 | - | pF | VGS = 0 V; VDS = 400 V; f = 100 kHz |
| Effective output capacitance, energy related | Co(er) | - | 35 | - | pF | VGS = 0 V; VDS = 0 to 400 V |
| Effective output capacitance, time related | Co(tr) | - | 54 | - | pF | VGS = 0 V; VDS = 0 to 400 V |
| Output charge | QOSS | - | 22 | - | nC | VGS = 0 V; VDS = 0 to 400 V |
| Turn-on delay time | td(on) | - | 2 | - | ns | VDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2 |
| Turn-off delay time | td(off) | - | 4 | - | ns | VDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2 |
| Rise time | tr | - | 5 | - | ns | VDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2 |
| Fall time | tf | - | 6 | - | ns | VDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2 |
| Gate charge | QG | - | 2.3 | - | nC | VGS = 0 to 6 V; VDS = 400 V; ID = 3 A |
| Gate-source charge | QGS | - | 0.2 | - | nC | VDS = 400 V; ID = 3 A |
| Gate-drain charge | QGD | - | 0.9 | - | nC | VDS = 400 V; ID = 3 A |
| Gate plateau voltage | VPlat | - | 2.4 | - | V | VDS = 400 V; ID = 3 A |
| Source-drain reverse voltage | VSD | - | 2.5 | - | V | VGS = 0 V; ISD = 3 A |
| Pulsed current, reverse | IS, pulse | - | 20 | - | A | VGS = 6 V |
| Reverse recovery charge | Qrr | - | 0 | - | nC | ISD = 3 A; VDS = 400 V |
| Reverse recovery time | trr | - | 0 | - | ns | ISD = 3 A; VDS = 400 V |
| Peak reverse recovery current | Irrm | - | 0 | - | A | ISD = 3 A; VDS = 400 V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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