Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+175℃ |
| RDS(on) | 90mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Pd - Power Dissipation | 136W |
| Output Capacitance(Coss) | 58pF |
| Input Capacitance(Ciss) | 1.39nF |
| Gate Charge(Qg) | 53nC |
| Description | 1.2kV 32A 90mΩ 3.6V 136W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | UF4C120070K4S-HXY |
| Package | TO-247-4L |
| Model Number | UF4C120070K4S-HXY |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+175℃ | RDS(on) | 90mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Pd - Power Dissipation | 136W | Output Capacitance(Coss) | 58pF |
| Input Capacitance(Ciss) | 1.39nF | Gate Charge(Qg) | 53nC |
| Description | 1.2kV 32A 90mΩ 3.6V 136W TO-247-4L Single FETs, MOSFETs RoHS | Mfr. Part # | UF4C120070K4S-HXY |
| Package | TO-247-4L | Model Number | UF4C120070K4S-HXY |
The HUAXUANYANG UF4C120070K4S is a 3rd generation SiC Power MOSFET designed for high-efficiency power conversion. It features a 3rd generation SiC MOSFET technology, an optimized package with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low reverse recovery (Qrr). This MOSFET is ideal for applications in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies, offering reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling requirements, and increased power density.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 5 mA | Fig. 11 |
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | A | VDS = 1200 V, VGS = 0 V | ||
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 75 | 90 | m | VGS = 15 V, ID = 20 A | Fig. 4, 5, 6 | |
| Transconductance | gfs | 12 | S | VDS= 20 V, IDS= 20 A | Fig. 7 | ||
| Input Capacitance | Ciss | 1390 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Output Capacitance | Coss | 58 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Reverse Transfer Capacitance | Crss | 2 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Diode Forward Voltage | VSD | 4.5 | V | VGS = -4 V, ISD = 10 A | Fig. 8, 9, 10 | ||
| Continuous Diode Forward Current | IS | 26 | A | VGS = -4 V, TJ = 25 C | Note 1 | ||
| Reverse Recover time | trr | 20 | ns | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 | ||
| Reverse Recovery Charge | Qrr | 254 | nC | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 | ||
| Thermal Resistance Junction to Case | RJC | 1.1 | C/W | Fig. 21 | |||
| Thermal Resistance Junction to Ambient | RJA | 40 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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