Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 13mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 253pF |
| Input Capacitance(Ciss) | 4.468nF |
| Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 76nC@10V |
| Description | P-Channel 40V 55A 62.5W Surface Mount PDFN-8(5.9x5.2) |
| Mfr. Part # | HYG110P04LQ2C2 |
| Package | PDFN-8(5.9x5.2) |
| Model Number | HYG110P04LQ2C2 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 13mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | - | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 253pF | Input Capacitance(Ciss) | 4.468nF |
| Pd - Power Dissipation | 62.5W | Gate Charge(Qg) | 76nC@10V |
| Description | P-Channel 40V 55A 62.5W Surface Mount PDFN-8(5.9x5.2) | Mfr. Part # | HYG110P04LQ2C2 |
| Package | PDFN-8(5.9x5.2) | Model Number | HYG110P04LQ2C2 |
The HYG110P04LQ2C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 9.0 m (typ.) at VGS = -10V and 13.0 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are available.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | Tc=25C | -40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Maximum Junction Temperature | TJ | -55 | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | |||
| Source Current-Continuous(Body Diode) | IS | Tc=25C | -55 | A | |||
| Pulsed Drain Current | IDM | Tc=25C | -200 | A | |||
| Continuous Drain Current | ID | Tc=25C | -55 | A | |||
| Continuous Drain Current | ID | Tc=100C | -38.8 | A | |||
| Maximum Power Dissipation | PD | Tc=25C | 62.5 | W | |||
| Maximum Power Dissipation | PD | Tc=100C | 31.2 | W | |||
| Thermal Resistance, Junction-to-Case | RJC | 2.4 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | 45 | C/W | |||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C | 174 | mJ | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=-250A | -40 | V | |||
| Drain-to-Source Leakage Current | IDSS | VDS=-40V,VGS=0V | -1 | A | |||
| Drain-to-Source Leakage Current | IDSS | TJ=125C,VDS=-40V,VGS=0V | -50 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1.0 | -1.6 | -3.0 | V | |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, IDS = -20A | 9.0 | 11.5 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, IDS = -20A | 13.0 | 17.5 | m | ||
| Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | ISD=-10A,VGS=0V | -0.83 | -1.2 | V | ||
| Reverse Recovery Time | trr | ISD=-20A,dISD/dt=100A/s | 18.4 | ns | |||
| Reverse Recovery Charge | Qrr | ISD=-20A,dISD/dt=100A/s | 13.5 | nC | |||
| Dynamic Characteristics | |||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 4.5 | ||||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4468 | pF | |||
| Output Capacitance | Coss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 253 | pF | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 140 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 10.5 | ns | |||
| Turn-on Rise Time | Tr | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 48 | ns | |||
| Turn-off Delay Time | td(OFF) | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 83 | ns | |||
| Turn-off Fall Time | Tf | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 72 | ns | |||
| Gate Charge Characteristics | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS =-32V,ID=-20A | 76 | nC | |||
| Total Gate Charge | Qg | VGS=-4.5V, VDS =-32V,ID=-20A | 36 | nC | |||
| Gate-Source Charge | Qgs | VGS=-10V, VDS =-32V,ID=-20A | 15.9 | nC | |||
| Gate-Drain Charge | Qgd | VGS=-10V, VDS =-32V,ID=-20A | 14.2 | nC | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!