Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 275A |
| RDS(on) | 2.2mΩ@4.5V |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.066nF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 1.192nF |
| Input Capacitance(Ciss) | 7.766nF |
| Pd - Power Dissipation | 167W |
| Gate Charge(Qg) | 182.8nC@10V |
| Description | N-Channel 30V 275A 167W Through Hole TO-220FB-3L |
| Mfr. Part # | HYG014N03LR1P |
| Package | TO-220FB-3L |
| Model Number | HYG014N03LR1P |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 275A |
| RDS(on) | 2.2mΩ@4.5V | Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.066nF | Number | 1 N-channel |
| Output Capacitance(Coss) | 1.192nF | Input Capacitance(Ciss) | 7.766nF |
| Pd - Power Dissipation | 167W | Gate Charge(Qg) | 182.8nC@10V |
| Description | N-Channel 30V 275A 167W Through Hole TO-220FB-3L | Mfr. Part # | HYG014N03LR1P |
| Package | TO-220FB-3L | Model Number | HYG014N03LR1P |
The HYG014N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON) = 1.3m typical at VGS = 10V and 1.6m typical at VGS = 4.5V), 100% avalanche tested, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) versions, this MOSFET is ideal for battery protection and power management in inverter systems.
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature (TJ) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature (TSTG) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | - | - | 275 | A |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 1000 | A |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 275 | A |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 194 | A |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 167 | W |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 83 | W |
| Thermal Resistance (RJC) | Junction-to-Case | - | 0.9 | - | °C/W |
| Thermal Resistance (RJA) | Junction-to-Ambient ** | - | 62.5 | - | °C/W |
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH *** | - | - | 900 | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250A | 1.0 | 1.3 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=40A | - | 1.3 | 1.6 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=40A | - | 1.7 | 2.2 | mΩ |
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.78 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/μs | - | 34 | - | ns |
| Reverse Recovery Charge (Qrr) | ISD=40A,dISD/dt=100A/μs | - | 29 | - | nC |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 7766 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1192 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1066 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 16.0 | - | ns |
| Turn-on Rise Time (Tr) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 109.3 | - | ns |
| Turn-off Delay Time (td(OFF)) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 106.1 | - | ns |
| Turn-off Fall Time (Tf) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 112.4 | - | ns |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, IDs=40A | - | 182.8 | - | nC |
| Total Gate Charge (Qg) | VDS =24V, VGS=4.5V, IDs=40A | - | 96.8 | - | nC |
| Gate-Source Charge (Qgs) | VDS =24V, VGS=4.5V, IDs=40A | - | 23.9 | - | nC |
| Gate-Drain Charge (Qgd) | VDS =24V, VGS=4.5V, IDs=40A | - | 49.5 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!