Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 314A |
| Operating Temperature - | - |
| RDS(on) | 2.5mΩ@4.5V,150A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 826pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.417nF |
| Output Capacitance(Coss) | 1.226nF |
| Pd - Power Dissipation | 268W |
| Gate Charge(Qg) | - |
| Description | N-Channel 30V 314A 268W Surface Mount TO-263-6 |
| Mfr. Part # | HY4903B6 |
| Package | TO-263-6 |
| Model Number | HY4903B6 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 314A |
| Operating Temperature - | - | RDS(on) | 2.5mΩ@4.5V,150A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 826pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.417nF | Output Capacitance(Coss) | 1.226nF |
| Pd - Power Dissipation | 268W | Gate Charge(Qg) | - |
| Description | N-Channel 30V 314A 268W Surface Mount TO-263-6 | Mfr. Part # | HY4903B6 |
| Package | TO-263-6 | Model Number | HY4903B6 |
The HY4903B6 is a N-Channel Enhancement Mode MOSFET from HOOYI, designed for switch applications, brushless motor drive, DC-DC conversion, and electric power steering. It features low on-resistance (RDS(ON)) at typical values of 1.3m (VGS=10V) and 1.7m (VGS=4.5V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, complying with RoHS standards.
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=55C | - | - | 5 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 2 | 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=150A | - | 1.3 | 1.7 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=150A | - | 1.7 | 2.5 | m |
| Diode Forward Voltage (VSD) | ISD=150A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=150A,dISD/dt=100A/s | - | 38 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 80 | - | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | - | 2.1 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 9417 | - | pF |
| Output Capacitance (Coss) | - | - | 1226 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 826 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=4, IDS=150A,VGS=10V | - | 52 | - | ns |
| Turn-on Rise Time (Tr) | - | - | 120 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 90 | - | ns |
| Turn-off Fall Time (Tf) | - | - | 78 | - | ns |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, ID=150A | - | 269 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 28 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 66 | - | nC |
| Drain-Source Voltage (VDSS) | - | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | - | - | - | 20 | V |
| Maximum Junction Temperature (TJ) | - | - | - | 175 | C |
| Storage Temperature Range (TSTG) | - | -55 | - | 175 | C |
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | - | - | 314 | A |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 1116 | A |
| Continuous Drain Current (ID) | Tc=25C | - | - | 314 | A |
| Continuous Drain Current (ID) | Tc=100C | - | - | 222 | A |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 268 | W |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 134 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | - | 0.56 | - | C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on 1in FR-4 board | - | 40 | - | C/W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.5mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | - | 1190 | - | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!