Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -40℃~+175℃ |
| RDS(on) | 52mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Output Capacitance(Coss) | 125pF |
| Pd - Power Dissipation | 326W |
| Input Capacitance(Ciss) | 2.766nF |
| Gate Charge(Qg) | 112nC |
| Description | 1.2kV 65A 52mΩ 4V 326W TO-263-7L Single FETs, MOSFETs RoHS |
| Mfr. Part # | NTBG040N120SC1-HXY |
| Package | TO-263-7L |
| Model Number | NTBG040N120SC1-HXY |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -40℃~+175℃ | RDS(on) | 52mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V | Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Output Capacitance(Coss) | 125pF | Pd - Power Dissipation | 326W |
| Input Capacitance(Ciss) | 2.766nF | Gate Charge(Qg) | 112nC |
| Description | 1.2kV 65A 52mΩ 4V 326W TO-263-7L Single FETs, MOSFETs RoHS | Mfr. Part # | NTBG040N120SC1-HXY |
| Package | TO-263-7L | Model Number | NTBG040N120SC1-HXY |
The HUAXUANYANG HXY ELECTRONICS CO.,LTD NTBG040N120SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device designed for high-efficiency power applications. Leveraging 3rd generation SiC MOSFET technology, it offers reduced switching losses, minimized gate ringing, and higher system efficiency. Its optimized package with a separate driver source pin and high blocking voltage with low on-resistance make it suitable for demanding applications like renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.
| Parameter | Symbol | Unit | Value | Test Condition |
| Maximum Ratings | ||||
| Operating junction and storage temperature | Tj , T stg | C | -40+175 | |
| Drain-source voltage | VDS | V | 1200 | |
| Continuous drain current | ID | A | 65 / 46 | TC = 25C ,VGS = 15V / TC = 100C,VGS = 15V |
| Pulsed drain current | ID pulse | A | 120 | (TC = 25C, tp limited by Tjmax) |
| Gate-Source voltage | VGS | V | -4/+18 | |
| Power dissipation | Ptot | W | 326 | (TC = 25C) |
| Gate-Source voltageAbsolute maximum values | VGSmax | V | -8/+22 | |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | C/W | 0.46 | |
| Thermal resistance, junction ambient. Max | RthJA | C/W | 40 | |
| Static Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | V | 1200 | VGS=0V, ID=100uA |
| Drain-source on-state resistance | RDS(on) | m | 32 / 40 / 59 / 62 | VGS=18V, ID=33.3A, TJ=25C / TJ=175C / VGS=15V, ID=33.3A, TJ=25C / TJ=175C |
| Gate threshold voltage | VGS(th ) | V | 4 | VDS=VGS,ID=10mA |
| Zero gate voltage drain current | IDSS | A | - / - / 1 | VDS=1200V,VGS=0V / TC=25C / TC=175C |
| Gate-source leakage current | IGSS | nA | - / - / 20 | VGS=20V, VDS=0V / VGS=15V, ID=33.3A / VGS=-4V, ID=100uA |
| Transconductance | gfs | mS | 100 | VDS=20V,ID=33.3A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | pF | 288 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Output Capacitance | Coss | pF | 112 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Reverse Transfer Capacitance | Crss | pF | 32 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Gate Total Charge | QG | nC | 125 | VDS = 800V, VGS = 0/15V, ID = 33.3A |
| Turn-on delay time | td(on) | ns | 13.4 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Rise time | tr | ns | 5.4 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-off delay time | td(off) | ns | 27.66 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Fall time | tf | ns | 51 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-On Switching Energy | EON | J | 79 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-Off Switching Energy | EOFF | J | 701 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Body Diode Characteristics | ||||
| Body Diode Forward Voltage | VSD | V | - / 4.8 / 5.3 | VGS=-4V,ISD=20A, TJ=25C / TJ=175C / VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C |
| Body Diode Reverse Recovery Time | trr | ns | 55 | VGS=-4V,ISD=20A, TJ=25C |
| Body Diode Reverse Recovery Charge | Qrr | nC | 55 | VGS=-4V,ISD=20A, TJ=25C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!