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Hefei Purple Horn E-Commerce Co., Ltd.

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China Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On
China Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On

  1. China Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On
  2. China Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On
  3. China Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On

Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On

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Description TO-247 Single FETs, MOSFETs RoHS
Mfr. Part # DIW065SIC015-HXY
Package TO-247
Model Number DIW065SIC015-HXY

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  1. Product Details
  2. Company Details

Product Specification

Description TO-247 Single FETs, MOSFETs RoHS Mfr. Part # DIW065SIC015-HXY
Package TO-247 Model Number DIW065SIC015-HXY

SiC Power MOSFET N-Channel Enhancement Mode

The HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance applications. Leveraging Wide bandgap SiC MOSFET technology, it offers low On-Resistance with high blocking voltage, low capacitances for high-speed switching, and low reverse recovery charge (Qrr). This results in reduced switching losses, increased system switching frequency, higher power density, and reduced heat sink requirements. It is suitable for applications such as switch mode power supplies, renewable energy systems, on-board chargers, and high voltage DC/DC converters.

Product Attributes

  • Brand: HUAXUANYANG
  • Manufacturer: HXY ELECTRONICS CO.,LTD
  • Website: www.hxymos.com
  • Model: DIW065SIC015
  • Package: TO-247
  • Technology: SiC (Silicon Carbide)
  • Channel Type: N-Channel Enhancement Mode
  • Certifications: Halogen free, RoHS compliant

Technical Specifications

Part Number Parameter Test Conditions Value Unit Notes
DIW065SIC015 Drain-Source Voltage (VDSmax) VGS = 0V, ID = 100A 750 V
Gate-Source Voltage (VGS) -10/+25 V
Recommended Gate-Source Voltage (VGSop) Static -4/+18 V
Continuous Drain Current (ID) VGS = 18V, TC = 25C 218 A Fig. 14
Continuous Drain Current (ID) VGS = 18V, TC = 100C 154 A
Pulsed Drain Current (ID,pulse) VGS = 18V, pulse width tp limited by Tjmax 485 A AC (f > 1 Hz)
Power Dissipation (PD) TC = 25C, Tj = 175C 714 W Fig.16
Operating Junction Temperature (Tj) -55~175 C
Storage Temperature (Tstg) -55~175 C
Drain-Source Breakdown Voltage (V(BR)DSS) VGS = 0V, ID = 100A 650 V
Gate Threshold Voltage (VGS(th)) VGS = VDS, ID =36mA 2.7 V Fig. 9
DIW065SIC015 Gate-Source Leakage Current (IGSS) VGS = 18V, VDS = 0V 250 nA
Drain Current Zero Gate Voltage (IDSS) VDS =750V, VGS = 0V, Tj = 25C 1 50 A
Drain-Source On-state Resistance (RDS(on)) VGS = 18V, ID =80A 11 m Fig. 3, 4 , 5
Drain-Source On-state Resistance (RDS(on)) VGS = 18V, ID =80A,Tj = 175C 15 m
Transconductance (gfs) VDS = 18V, ID =80A 83 S Fig. 6
Transconductance (gfs) VDS = 18V, ID =80A,Tj = 175C 66 S
Thermal resistance from Junction to Case (Rth(jc)) 0.21 K/W Fig. 15
DIW065SIC015 Gate to Source Charge (QGS) VDS = 400V, ID =80A, VGS = -4V/18V 125 nC Fig. 10
Gate to Drain Charge (QGD) 52 nC
Total Gate Charge (QG) 268 nC
Input Capacitance (Ciss) VGS = 0V, VDS = 600V, f =1 MHz, VAC = 25mV 6220 pF Fig. 13
Output Capacitance (Coss) 482 pF
Reverse Transfer Capacitance (Crss) 37 pF
Internal Gate Resistance (RG(int)) f=1 MHz, VAC = 25mV 1
DIW065SIC015 Turn-On Delay Time (td(on)) VDS = 400V, VGS = -4/+18V, ID=80 A, RG(iext) = 5 , L = 100H 5 nS Fig.20
Rise Time (tr) 62 nS
Turn-Off Delay Time (td(off)) 38 nS
Fall Time (tf) 11 nS
Turn-On Energy (Eon) 869 J Fig.19
Turn-Off Energy (Eoff) 467 J
Total switching energy (Etot) 1336 J
Diode Forward Voltage (VSD) VGS = -4V, ISD = 40A 3.8 V Fig. 7,8
DIW065SIC015 Diode Forward Voltage (VSD) VGS = -4V, ISD = 40A, Tj = 175C 3.4 V
Continuous Diode Forward Current (IS) VGS = -4V, TC = 25C 142 A
Diode pulse Current (IS, pulse) VGS = -4V, pulse width tp limited by Tjmax 485 A
Reverse Recovery Charge (Qrr) VGS = -4V, ISD = 80A, VR = 400V, dif/dt = 3000A/us 555 nC

2512091725_HXY-MOSFET-DIW065SIC015-HXY_C53133732.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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