Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 49A |
| RDS(on) | 33mΩ@20V |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| Pd - Power Dissipation | 242W |
| Input Capacitance(Ciss) | 1.823nF |
| Output Capacitance(Coss) | 190pF |
| Gate Charge(Qg) | 96nC |
| Description | N-Channel 650V 49A Through Hole TO-247-4L |
| Mfr. Part # | HC3M0045065K1 |
| Package | TO-247-4L |
| Model Number | HC3M0045065K1 |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 49A |
| RDS(on) | 33mΩ@20V | Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | Pd - Power Dissipation | 242W |
| Input Capacitance(Ciss) | 1.823nF | Output Capacitance(Coss) | 190pF |
| Gate Charge(Qg) | 96nC | Description | N-Channel 650V 49A Through Hole TO-247-4L |
| Mfr. Part # | HC3M0045065K1 | Package | TO-247-4L |
| Model Number | HC3M0045065K1 |
The HC3M0045065K1 is a 3rd generation SiC MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD, featuring an optimized package with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET is designed to reduce switching losses, minimize gate ringing, increase system efficiency, lower cooling requirements, boost power density, and enable higher system switching frequencies. It is halogen-free and RoHS compliant.
| Parameter | Symbol | Test Condition | Value | Unit |
| Maximum Ratings | ||||
| Drain-source voltage | VDS | 650 | V | |
| Continuous drain current | ID | TC = 25C | 123 | A |
| Continuous drain current | ID | TC = 100C | 49 | A |
| Pulsed drain current | ID pulse | TC = 25C, tp limited by Tjmax | 53 | A |
| Gate-Source voltage | VGS | -5/+20 | V | |
| Power dissipation | Ptot | TC = 25C | 242 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+175 | C | |
| Avalanche energy, single pulse | EAS | L=10mH | 1000 | mJ |
| Gate-Source voltagedynamic,Absolute maximum values | VGSmax | -10/+25 | V | |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | 0.62 | C/W | |
| Thermal resistance, junction ambient. Max | RthJA | 40 | C/W | |
| Static Characteristic | ||||
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=25C | 45 | m |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=175C | 48 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=7mA | 4 | V |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V | 250 | A |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V, Tj=175C | 1 | mA |
| Gate-source leakage current | IGSS | VGS=20V | 10 | nA |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 650 | V |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 1823 | pF |
| Output Capacitance | Coss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 156 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 40 | pF |
| Gate Total Charge | QG | VDD = 400V VGS = -5/+20V ID = 17.6A | 190 | nC |
| Turn-on delay time | td(on) | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 19 | ns |
| Rise time | tr | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 26 | ns |
| Turn-off delay time | td(off) | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 15 | ns |
| Fall time | tf | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 17.6 | ns |
| Turn-On Switching Energy | EON | VDS = 400V VGS = -5/20V ID = 17.6A | 188 | J |
| Turn-Off Switching Energy | EOFF | VDS = 400V VGS = -5/20V ID = 17.6A | 156 | J |
| Body Diode Characteristic | ||||
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=25C | 1.7 | V |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=175C | 3.2 | V |
| Body Diode Reverse Recovery Time | trr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 33 | ns |
| Body Diode Reverse Recovery Charge | Qrr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 49 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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