| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| RDS(on) | 800mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.62nF |
| Output Capacitance(Coss) | 140pF |
| Pd - Power Dissipation | 32W |
| Gate Charge(Qg) | 35nC@10V |
| Description | 650V 10A 800mΩ@10V 4V 1 N-channel 32W TO-220F Single FETs, MOSFETs RoHS |
| Mfr. Part # | H10N65F |
| Package | TO-220F |
| Model Number | H10N65F |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 10A |
| RDS(on) | 800mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.62nF | Output Capacitance(Coss) | 140pF |
| Pd - Power Dissipation | 32W | Gate Charge(Qg) | 35nC@10V |
| Description | 650V 10A 800mΩ@10V 4V 1 N-channel 32W TO-220F Single FETs, MOSFETs RoHS | Mfr. Part # | H10N65F |
| Package | TO-220F | Model Number | H10N65F |
The H10N65F is a 650V N-Channel MOSFET designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.
| Part Number | Package | Drain-to-Source Voltage (VDS) | Continuous Drain Current (TC=25) (ID) | Continuous Drain Current (TC=100) (ID) | Pulsed Drain Current (IDM) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | Static Drain-to-Source On-Resistance (RDS(on)) | Operating Junction and Storage Temperature Range (TJ, TSTG) |
| H10N65F | TO-220F | 650 V | 10 A | 6 A | 10 A | 32 W | 30 V | 0.8 (Typ) | -55 to 150 |
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| V(BR)DSS | Drain- Source Breakdown Voltage | 650 | -- | -- | V | VGS=0V,ID=250A |
| IDSS | Zero Gate Voltage Drain Current (25) | -- | -- | 1 | A | VDS=650V,VGS=0V |
| IDSS | Zero Gate Voltage Drain Current (100) | -- | -- | 100 | A | VDS=650V,VGS=0V |
| IGSS | Gate to Source Forward Leakage | -- | -- | 100 | nA | VGS=30V ,VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-30V ,VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 2 | -- | 4 | V | VGS=VDS,ID=250A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 0.8 | 1.0 | VGS=10V,ID=5A | |
| Ciss | Input Capacitance | -- | 1620 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Coss | Output Capacitance | -- | 140 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Crss | Reverse Transfer Capacitance | -- | 7 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Qg | Total Gate Charge | -- | 35 | -- | nC | VDS=520V ID=10A VGS=10V |
| Qgs | Gate- to- Source Charge | -- | 9 | -- | nC | VDS=520V ID=10A VGS=10V |
| Qgd | Gate-to-Drain(" Miller") Charge | -- | 13 | -- | nC | VDS=520V ID=10A VGS=10V |
| td(ON) | Turn- on Delay Time | -- | 16 | -- | nS | VDS=325V ID=10A VGS=10V |
| trise | Rise Time | -- | 34 | -- | nS | VDS=325V ID=10A VGS=10V |
| td(OFF) | Turn- OFF Delay Time | -- | 65 | -- | nS | VDS=325V ID=10A VGS=10V |
| tfall | Fall Time | -- | 16 | -- | nS | VDS=325V ID=10A VGS=10V |
| VSD | Diode Forward Voltage | -- | -- | 1.4 | V | IF=10A,VGS=0V |
| trr | Reverse Recovery Time | -- | 418 | -- | nS | VGS=0V,IF=10A di/dt=100A/s |
| Qrr | Reverse Recovery Charge | -- | 3.4 | -- | uC | VGS=0V,IF=10A di/dt=100A/s |
| Symbol | Parameter | Rating | Units | Conditions |
| EAS | Single Pulse Avalanche Engergy | 500 | mJ | L = 10mH, RG = 25 ,TC=25 |
| RJC | Thermal Resistance Junction-Case | 3.13 | / W | -- |
| RJA | Thermal Resistance Junction-Ambient | 110 | / W | -- |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!