| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| RDS(on) | 1.6Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 633pF |
| Output Capacitance(Coss) | 110pF |
| Pd - Power Dissipation | 101W |
| Gate Charge(Qg) | 20nC@10V |
| Description | 500V 5A 1.6Ω@10V 4.5V@250uA 1 N-channel 101W TO-220F-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | JCS5N50FT-220MF |
| Package | TO-220F-3 |
| Model Number | JCS5N50FT-220MF |
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Product Specification
| Drain to Source Voltage | 500V | Current - Continuous Drain(Id) | 5A |
| RDS(on) | 1.6Ω@10V | Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 633pF | Output Capacitance(Coss) | 110pF |
| Pd - Power Dissipation | 101W | Gate Charge(Qg) | 20nC@10V |
| Description | 500V 5A 1.6Ω@10V 4.5V@250uA 1 N-channel 101W TO-220F-3 Single FETs, MOSFETs RoHS | Mfr. Part # | JCS5N50FT-220MF |
| Package | TO-220F-3 | Model Number | JCS5N50FT-220MF |
The JCS5N50T is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
|---|---|---|---|---|---|---|
| JCS5N50VT-V-B, JCS5N50VT-V-BR | N/A | IPAK | 5 | 500 | 1.6 | 15 |
| JCS5N50RT-R-B, JCS5N50RT-R-BR, JCS5N50RT-R-A, JCS5N50RT-R-AR | JCS5N50RT | DPAK | 5 | 500 | 1.6 | 15 |
| JCS5N50CT-C-B, JCS5N50CT-C-BR | N/A | TO-220C | 5 | 500 | 1.6 | 15 |
| JCS5N50FT-F-B, JCS5N50FT-F-BR | N/A | TO-220MF | 5 | 500 | 1.6 | 15 |
| Parameter | Symbol | Value (JCS5N50VT/RT) | Value (JCS5N50CT) | Value (JCS5N50FT) | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | 500 | 500 | V |
| Drain Current -continuous (T=25) | ID | 5* | 5* | 5* | A |
| Drain Current -continuous (T=100) | ID | 3.16* | 3.16* | 3.16* | A |
| Drain Current - pulse (note 1) | IDM | 20* | 20* | 20* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 305 | 305 | 305 | mJ |
| Avalanche Current (note 1) | IAR | 5 | 5 | 5 | A |
| Repetitive Avalanche Current (note 1) | EAR | 10.1 | 10.1 | 10.1 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 91 | 101 | 41 | W |
| Power Dissipation -Derate above 25 | 0.73 | 0.81 | 0.33 | W/ | |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 |
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.53 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.5A | - | 1.33 | 1.6 | |
| Forward Transconductance | gfs | VDS = 40V, ID=2.5Anote 4 | - | 5.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 492 | 633 | pF |
| Output capacitance | Coss | - | 83 | 110 | pF | |
| Reverse transfer capacitance | Crss | - | 16 | 22 | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=5A,RG=25 note 45 | - | 45 | 60 | ns |
| Turn-On rise time | tr | - | 26 | 34 | ns | |
| Turn-Off delay time | td(off) | - | 133 | 170 | ns | |
| Turn-Off Fall time | tf | - | 214 | 270 | ns | |
| Total Gate Charge | Qg | VDS =400V , ID=5A VGS =10V note 45 | - | 15 | 20 | nC |
| Gate-Source charge | Qgs | - | 3.5 | - | nC | |
| Gate-Drain charge | Qgd | - | 6 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=5A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=5A dIF/dt=100A/s (note 4) | - | 268 | - | ns |
| Reverse recovery charge | Qrr | - | 2.1 | - | C | |
| Parameter | Symbol | Max (JCS5N50VT/RT) | Max (JCS5N50CT) | Max (JCS5N50FT) | Unit |
|---|---|---|---|---|---|
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.38 | 1.23 | 3.08 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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