Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 14mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 12.4pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 437pF |
| Input Capacitance(Ciss) | 2.348nF |
| Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 47nC@10V |
| Description | 100V 60A 14mΩ@4.5V 3V@250uA 1 N-channel 62.5W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG092N10LS1C2 |
| Package | PDFN-8(5.9x5.2) |
| Model Number | HYG092N10LS1C2 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 14mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 12.4pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 437pF | Input Capacitance(Ciss) | 2.348nF |
| Pd - Power Dissipation | 62.5W | Gate Charge(Qg) | 47nC@10V |
| Description | 100V 60A 14mΩ@4.5V 3V@250uA 1 N-channel 62.5W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS | Mfr. Part # | HYG092N10LS1C2 |
| Package | PDFN-8(5.9x5.2) | Model Number | HYG092N10LS1C2 |
The HYG092N10LS1C2 is a single N-Channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low RDS(ON) of 7.8 m (typ.) at VGS = 10V and 11.5 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, making it RoHS compliant.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Maximum Junction Temperature | TJ | 175 | °C | |||
| Storage Temperature Range | TSTG | -55 | 175 | °C | ||
| Source Current-Continuous (Body Diode) | IS | TC=25°C, Mounted on Large Heat Sink | 60 | A | ||
| Pulsed Drain Current | IDM | TC=25°C * | 220 | A | ||
| Continuous Drain Current | ID | TC=25°C | 60 | A | ||
| Continuous Drain Current | ID | TC=100°C | 42 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 62.5 | W | ||
| Maximum Power Dissipation | PD | TC=100°C | 31.2 | W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.4 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | ** | 50 | °C/W | ||
| Single Pulsed Avalanche Energy | EAS | *** L=0.3mH | 164.2 | mJ | ||
| Electrical Characteristics (TC =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V, VGS=0V | - | 1 | μA | |
| Drain-to-Source Leakage Current | IDSS | TJ=100°C | - | 50 | μA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1.0 | 1.6 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V, IDS=20A | 7.8 | 9.6 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=4.5V, IDS=20A | 11.5 | 14 | mΩ | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=20A, VGS=0V | 0.84 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=20A, dISD/dt=100A/μs | 40.4 | - | ns | |
| Reverse Recovery Charge | Qrr | 48 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1MHz | 1.7 | - | Ω | |
| Input Capacitance | Ciss | VGS=0V, VDS=50V, Frequency=1.0MHz | 2348 | - | pF | |
| Output Capacitance | Coss | 437 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 12.4 | - | pF | ||
| Turn-on Delay Time | td(ON) | VDD=50V, RG=4Ω, IDS=20A, VGS=10V | 12.1 | - | ns | |
| Turn-on Rise Time | tr | 35.5 | - | ns | ||
| Turn-off Delay Time | td(OFF) | 42 | - | ns | ||
| Turn-off Fall Time | tf | 87 | - | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg(10V) | VDS =50V, VGS=10V, ID=20A | 47 | - | nC | |
| Total Gate Charge | Qg(4.5V) | 25 | - | nC | ||
| Gate-Source Charge | Qgs | 8.2 | - | nC | ||
| Gate-Drain Charge | Qgd | 13.4 | - | nC | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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