Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 294pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 426pF |
| Input Capacitance(Ciss) | 6.835nF |
| Pd - Power Dissipation | 288W |
| Gate Charge(Qg) | 133nC@10V |
| Description | 100V 140A 7mΩ@10V 4V@250uA 1 N-channel 288W TO-220FB-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | HY3410NA2P |
| Package | TO-220FB-3 |
| Model Number | HY3410NA2P |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 294pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 426pF | Input Capacitance(Ciss) | 6.835nF |
| Pd - Power Dissipation | 288W | Gate Charge(Qg) | 133nC@10V |
| Description | 100V 140A 7mΩ@10V 4V@250uA 1 N-channel 288W TO-220FB-3 Single FETs, MOSFETs RoHS | Mfr. Part # | HY3410NA2P |
| Package | TO-220FB-3 | Model Number | HY3410NA2P |
The HY3410NA2P is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 140A, with a low on-state resistance of 5.7m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available. It is suitable for use in Uninterruptible Power Supplies and Motor Control systems.
| Parameter | Test Conditions | HY3410NA2 Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | |||||
| VDSS Drain-Source Voltage | Tc=25C Unless Otherwise Noted | V | - | - | 100 |
| VGSS Gate-Source Voltage | V | - | - | ±20 | |
| TJ Maximum Junction Temperature | °C | -55 | - | 175 | |
| TSTG Storage Temperature Range | °C | -55 | - | 175 | |
| ID Continuous Drain Current | Tc=25°C | A | - | 140 | - |
| ID Continuous Drain Current | Tc=100°C | A | - | 99 | - |
| IDM Pulsed Drain Current | Tc=25°C | A | - | 410 | - |
| PD Maximum Power Dissipation | Tc=25°C | W | - | 288 | - |
| PD Maximum Power Dissipation | Tc=100°C | W | - | 144 | - |
| RθJC Thermal Resistance, Junction-to-Case | °C/W | - | 0.52 | - | |
| RθJA Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board. | °C/W | - | 62 | - |
| EAS Single Pulsed-Avalanche Energy | L=0.3mH | mJ | - | 508.8 | - |
| Electrical Characteristics | |||||
| BVDSS Drain-Source Breakdown Voltage | VGS=0V,IDS=250μA | V | 100 | - | - |
| IDSS Drain-to-Source Leakage Current | VDS=100V,VGS=0V | μA | - | - | 1.0 |
| IDSS Drain-to-Source Leakage Current | TJ=125°C | μA | - | - | 50 |
| VGS(th) Gate Threshold Voltage | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 |
| IGSS Gate-Source Leakage Current | VGS=±20V,VDS=0V | nA | - | - | ±100 |
| RDS(ON)* Drain-Source On-State Resistance | VGS=10V,IDS=50A | mΩ | - | 5.7 | 7 |
| VSD* Diode Forward Voltage | ISD=50A,VGS=0V | V | - | 0.86 | 1.3 |
| trr Reverse Recovery Time | ISD=50A,dISD/dt=100A/μs | ns | - | 41.2 | - |
| Qrr Reverse Recovery Charge | nC | - | 75 | - | |
| RG Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | - | 1.5 | - |
| Ciss Input Capacitance | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | - | 6835 | - |
| Coss Output Capacitance | pF | - | 426 | - | |
| Crss Reverse Transfer Capacitance | pF | - | 294 | - | |
| td(ON) Turn-on Delay Time | VDD=50V,RG=4Ω, IDS=50A,VGS=10V | ns | - | 28.1 | - |
| Tr Turn-on Rise Time | ns | - | 98.2 | - | |
| td(OFF) Turn-off Delay Time | ns | - | 75.5 | - | |
| Tf Turn-off Fall Time | ns | - | 101.9 | - | |
| Qg Total Gate Charge | VDS=50V, VGS=10V, ID=50A | nC | - | 133 | - |
| Qgs Gate-Source Charge | nC | - | 40 | - | |
| Qgd Gate-Drain Charge | nC | - | 40 | - | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!