Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 2.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 773pF |
| Input Capacitance(Ciss) | 3.011nF |
| Pd - Power Dissipation | 65W |
| Gate Charge(Qg) | 44.7nC@10V |
| Description | N-Channel 30V 150A 65W Surface Mount PDFN5x6-8 |
| Mfr. Part # | HYG013N03LS1C2 |
| Package | PDFN5x6-8 |
| Model Number | HYG013N03LS1C2 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 2.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 773pF | Input Capacitance(Ciss) | 3.011nF |
| Pd - Power Dissipation | 65W | Gate Charge(Qg) | 44.7nC@10V |
| Description | N-Channel 30V 150A 65W Surface Mount PDFN5x6-8 | Mfr. Part # | HYG013N03LS1C2 |
| Package | PDFN5x6-8 | Model Number | HYG013N03LS1C2 |
The HYG013N03LS1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are available, complying with RoHS standards.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | - | - | 30 | V |
| Gate-Source Voltage | VGSS | Tc=25C | - | - | 20 | V |
| Maximum Junction Temperature | TJ | - | -55 | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | - | 150 | A |
| Pulsed Drain Current | IDM | Tc=25C | - | - | 540 | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 150 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 106 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 65 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 32 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 2.3 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | - | 45 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C | - | 264 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125C, VDS=30V, VGS=0V | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 1.8 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, IDS=20A | - | 1.3 | 1.6 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, IDS=20A | - | 2.0 | 2.8 | m |
| Diode Forward Voltage | VSD | ISD=20A, VGS=0V | - | 0.77 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A, dISD/dt=100A/s | - | 31.2 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A, dISD/dt=100A/s | - | 23.7 | - | nC |
| Gate Resistance | RG | VGS=0V, VDS=0V, Frequency=1.0MHz | - | 0.78 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3011 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 773 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 9.2 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 12.7 | - | ns |
| Turn-on Rise Time | Tr | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 53.1 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 30.3 | - | ns |
| Turn-off Fall Time | Tf | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 11.2 | - | ns |
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=10V | - | 44.7 | - | nC |
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=4.5V | - | 21.1 | - | nC |
| Gate-Source Charge | Qgs | VDS =24V, ID=20A, VGS=10V | - | 10.7 | - | nC |
| Gate-Drain Charge | Qgd | VDS =24V, ID=20A, VGS=10V | - | 7.1 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!