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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current
China Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current

  1. China Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current

Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 22A
RDS(on) 15mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.2V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 39pF@30V
Number 2 N-Channel
Input Capacitance(Ciss) 1.016nF
Pd - Power Dissipation 25W
Gate Charge(Qg) 13nC@10V
Description N-Channel Array 60V 22A 25W PRPAK3x3-8L
Mfr. Part # HSBB6254
Package PRPAK3x3-8L
Model Number HSBB6254

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 22A
RDS(on) 15mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.2V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 39pF@30V Number 2 N-Channel
Input Capacitance(Ciss) 1.016nF Pd - Power Dissipation 25W
Gate Charge(Qg) 13nC@10V Description N-Channel Array 60V 22A 25W PRPAK3x3-8L
Mfr. Part # HSBB6254 Package PRPAK3x3-8L
Model Number HSBB6254

Product Overview

The HSBB6254 is a dual N-channel MOSFET designed for fast switching applications. Featuring 60V drain-source voltage and a continuous drain current of up to 22A, these MOSFETs are built with advanced high cell density Trench technology. They offer super low gate charge, excellent CdV/dt effect decline, and are 100% EAS guaranteed. Available in a Green Device option, the HSBB6254 is ideal for load switching, battery protection, lighting, and bridge topologies.

Product Attributes

  • Brand: HS-Semi
  • Model Series: HSBB6254
  • Technology: Advanced high cell density Trench technology
  • Certifications: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 22 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 15 A
IDM Pulsed Drain Current2 32 A
EAS Single Pulse Avalanche Energy3 31 mJ
IAS Avalanche Current 11 A
PD@TA=25 Total Power Dissipation4 25 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 70 /W
RJL Thermal Resistance Junction-Case1 --- 9 /W
Product Summary
VDS 60 V
RDS(ON),max 15 m
ID 22 A
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.023 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- 12 15 m
VGS=4.5V , ID=3A --- 16 21 V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.2 V
VGS(th) VGS(th) Temperature Coefficient --- -5.08 --- mV/
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- --- 1 uA
VDS=48V , VGS=0V , TJ=55 --- --- 30 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.3 ---
Qg Total Gate Charge (10V) VDS=30V , VGS=10V , ID=4A --- 13 --- nC
Qgs Gate-Source Charge --- 3.88 ---
Qgd Gate-Drain Charge --- 2.2 ---
Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3 ID=1A --- 7 --- ns
Tr Rise Time --- 18.2 ---
Td(off) Turn-Off Delay Time --- 19 ---
Tf Fall Time --- 3.4 ---
Ciss Input Capacitance VDS=30V , VGS=0V , f=1MHz --- 1016 --- pF
Coss Output Capacitance --- 231 ---
Crss Reverse Transfer Capacitance --- 39 ---
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1.3 V

Applications:

  • Load Switching
  • Battery Protection
  • Lighting
  • Bridge Topologies

Notes:

  • 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 Tested by pulsed, pulse width 300us, duty cycle 2%.
  • 3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.5mH, IAS=11A.
  • 4 Power dissipation is limited by 150 junction temperature.
  • 5 Theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121502_HUASHUO-HSBB6254_C2903564.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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