Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 35mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 123pF |
| Input Capacitance(Ciss) | 3.679nF |
| Pd - Power Dissipation | 60W |
| Gate Charge(Qg) | 18nC@10V |
| Description | P-Channel 60V 40A 60W Surface Mount PPAK-8L(5x6) |
| Mfr. Part # | HYG210P06LQ1C2 |
| Package | PPAK-8L(5x6) |
| Model Number | HYG210P06LQ1C2 |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 35mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 123pF | Input Capacitance(Ciss) | 3.679nF |
| Pd - Power Dissipation | 60W | Gate Charge(Qg) | 18nC@10V |
| Description | P-Channel 60V 40A 60W Surface Mount PPAK-8L(5x6) | Mfr. Part # | HYG210P06LQ1C2 |
| Package | PPAK-8L(5x6) | Model Number | HYG210P06LQ1C2 |
The HYG210P06LQ1C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers robust performance with a -60V/-40A rating, low on-resistance of 20m(typ.) at VGS = -10V, and 100% avalanche tested for reliability. This device is available in Halogen-free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs.
| Part Number | Feature | RDS(ON) Typ. @ VGS = -10V | RDS(ON) Typ. @ VGS = -4.5V | VDSS | ID (Tc=25C) | Application |
| HYG210P06LQ1C2 | Single P-Channel Enhancement Mode MOSFET, -60V/-40A, 100% Avalanche Tested, Halogen free and Green Devices Available | 20m | 26m | -60V | -40A | Switching Application, Power Management for DC/DC, Battery Protection |
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | -60 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| IS | Source Current-Continuous(Body Diode) Tc=25C | -40 | A |
| IDM | Pulsed Drain Current * Tc=25C | -140 | A |
| ID | Continuous Drain Current Tc=25C | -40 | A |
| ID | Continuous Drain Current Tc=100C | -28 | A |
| PD | Maximum Power Dissipation Tc=25C | 60 | W |
| PD | Maximum Power Dissipation Tc=100C | 30 | W |
| RJC | Thermal Resistance, Junction-to-Case | 2.5 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient ** | 45 | C/W |
| EAS | Single Pulsed-Avalanche Energy *** L=0.3mH | 289 | mJ |
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=-250uA | -60 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=-60V, VGS=0V | - | - | -1 | uA |
| IDSS | Drain-to-Source Leakage Current TJ=125C | VDS=-60V, VGS=0V | - | - | -50 | V |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=-250uA | -1.0 | -1.7 | -3.0 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON)* | Drain-Source On-state Resistance | VGS=-10V,ID= -20A | - | 20 | 25 | m |
| RDS(ON)* | Drain-Source On-state Resistance | VGS=-4.5V,ID= -20A | - | 26 | 35 | m |
| VSD* | Diode Forward Voltage | ISD= -20A,VGS=0V | - | -0.9 | -1.3 | V |
| trr | Reverse Recovery Time | ISD= -20A,dI/dt=100A/us | - | 28 | - | ns |
| Qrr | Reverse Recovery Charge | ISD= -20A,dI/dt=100A/us | - | 25 | - | nC |
| Symbol | Parameter | Test Conditions | Typ. | Unit |
| RG | Gate Resistance | VGS=0V,VDS=0V, Frequency=1.0MHz | 6.4 | |
| Ciss | Input Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 3679 | pF |
| Coss | Output Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 123 | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 60 | pF |
| td(ON) | Turn-on Delay Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 11 | ns |
| Tr | Turn-on Rise Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 17 | ns |
| td(OFF) | Turn-off Delay Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 73 | ns |
| Tf | Turn-off Fall Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 31 | ns |
| Symbol | Parameter | Test Conditions | Typ. | Unit |
| Qg | Total Gate Charge | VDS = -48V, VGS= -10V ID= -20A | 90 | nC |
| Qgs | Gate-Source Charge | VDS = -48V, VGS= -10V ID= -20A | 6 | nC |
| Qgd | Gate-Drain Charge | VDS = -48V, VGS= -10V ID= -20A | 18 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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