| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 42mΩ@10V,5A |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF@15V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.027nF@15V |
| Pd - Power Dissipation | 21W |
| Gate Charge(Qg) | 19nC@10V |
| Description | N-Channel Array 60V 16A 21W PRPAK3x3-8L |
| Mfr. Part # | HSBB6214 |
| Package | PRPAK3x3-8L |
| Model Number | HSBB6214 |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 42mΩ@10V,5A |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | Reverse Transfer Capacitance (Crss@Vds) | 46pF@15V |
| Number | 2 N-Channel | Input Capacitance(Ciss) | 1.027nF@15V |
| Pd - Power Dissipation | 21W | Gate Charge(Qg) | 19nC@10V |
| Description | N-Channel Array 60V 16A 21W PRPAK3x3-8L | Mfr. Part # | HSBB6214 |
| Package | PRPAK3x3-8L | Model Number | HSBB6214 |
The HSBB6214 is a dual N-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 16 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 10 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.6 | A | |||
| IDM | Pulsed Drain Current2 | 32 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 22 | mJ | |||
| IAS | Avalanche Current | 21 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.7 | W | |||
| PD@TC=25 | Total Power Dissipation4 | 21 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 75 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 6 | /W | |||
| Product Summary | ||||||
| Model | HSBB6214 | |||||
| Type | Dual N-Ch | |||||
| Voltage | 60V | |||||
| Switching | Fast Switching | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.044 | V/ | ||
| RDS(ON),MAX | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | 42 | m | ||
| VGS=4.5V , ID=5A | 52 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -4.8 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=5A | 28 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.5 | |||
| Qg | Total Gate Charge | VDS=48V , VGS=10V , ID=4A | 19 | nC | ||
| Qgs | Gate-Source Charge | 2.6 | nC | |||
| Qgd | Gate-Drain Charge | 4.1 | nC | |||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=4A | 3 | ns | ||
| tr | Rise Time | 34 | ns | |||
| td(off) | Turn-Off Delay Time | 23 | ns | |||
| tf | Fall Time | 6 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1027 | pF | ||
| Coss | Output Capacitance | 65 | pF | |||
| Crss | Reverse Transfer Capacitance | 46 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 16 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=4A , dI/dt=100A/s , TJ=25 | 12.1 | nS | ||
| Qrr | Reverse Recovery Charge | 6.7 | nC | |||
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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