Hefei Purple Horn E-Commerce Co., Ltd.
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 65A |
| RDS(on) | 40mΩ@18V |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Output Capacitance(Coss) | 125pF |
| Pd - Power Dissipation | 326W |
| Input Capacitance(Ciss) | 2.766nF |
| Gate Charge(Qg) | 112nC |
| Description | N-Channel 1.2kV 65A 326W Surface Mount TO-263-7L |
| Mfr. Part # | HC1M40120J |
| Package | TO-263-7L |
| Model Number | HC1M40120J |
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Product Specification
| Configuration | - | Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 65A | RDS(on) | 40mΩ@18V |
| Operating Temperature - | -40℃~+175℃ | Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Output Capacitance(Coss) | 125pF | Pd - Power Dissipation | 326W |
| Input Capacitance(Ciss) | 2.766nF | Gate Charge(Qg) | 112nC |
| Description | N-Channel 1.2kV 65A 326W Surface Mount TO-263-7L | Mfr. Part # | HC1M40120J |
| Package | TO-263-7L | Model Number | HC1M40120J |
The HC1M40120J is a SiC Power MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD. This N-Channel Enhancement Mode device leverages 3rd generation SiC MOSFET technology for high performance in demanding applications. It offers reduced switching losses, higher system efficiency, and increased power density due to its optimized package with a separate driver source pin, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This makes it ideal for renewable energy systems, EV battery chargers, high voltage DC/DC converters, and Switch Mode Power Supplies.
| Parameter | Symbol | Unit | Test Condition | Min. | Typ. | Max. | Value |
| Maximum Ratings | |||||||
| Operating junction and storage temperature | Tj , T stg | C | -40 | +175 | |||
| Drain-source voltage | VDS | V | 1200 | ||||
| Continuous drain current | ID | A | TC = 25C ,VGS = 15V | 120 | |||
| Continuous drain current | ID | A | TC = 100C,VGS = 15V | 65 | |||
| Pulsed drain current | ID pulse | A | (TC = 25C, tp limited by Tjmax) | 46 | |||
| Gate-Source voltage | VGS | V | -4 | +18 | |||
| Gate-Source voltageAbsolute maximum values | VGSmax | V | -8 | +22 | |||
| Power dissipation | Ptot | W | (TC = 25C) | 326 | |||
| Thermal Resistance | |||||||
| Thermal resistance, junction case. Max | RthJC | C/W | 0.46 | ||||
| Thermal resistance, junction ambient. Max | RthJA | C/W | 40 | ||||
| Static Characteristic | |||||||
| Drain-source on-state resistance | RDS(on) | m | VGS=18V, ID=33.3A, TJ=25C | 32 | 40 | ||
| Drain-source on-state resistance | RDS(on) | m | VGS=18V, ID=33.3A, TJ=175C | 59 | |||
| Zero gate voltage drain current | IDSS | A | VDS=1200V,VGS=0V | - | 1 | ||
| Zero gate voltage drain current | IDSS | A | VDS=1200V,VGS=0V, TC=175C | - | 20 | ||
| Gate threshold voltage | VGS(th ) | V | VDS=VGS,ID=10mA | 4 | 5 | ||
| Drain-source breakdown voltage | BVDSS | V | VGS=0V, ID=100uA | 1200 | |||
| Transconductance | gfs | S | VDS=20V,ID=33.3A | 100 | |||
| Gate-source leakage current | IGSS | nA | VGS=22V, VDS=0V | - | 20 | ||
| Electrical Characteristic (at Tj = 25 C, unless otherwise specified) | |||||||
| Drain-source on-state resistance | RDS(on) | m | VGS=15V, ID=33.3A, TJ=25C | 32 | 40 | ||
| Drain-source on-state resistance | RDS(on) | m | VGS=15V, ID=33.3A, TJ=175C | 59 | |||
| Dynamic Characteristic | |||||||
| Input Capacitance | Ciss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 288 | |||
| Output Capacitance | Coss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 112 | |||
| Reverse Transfer Capacitance | Crss | pF | VDS = 1000V, VGS = 0V, TJ = 25C | 14 | |||
| Gate Total Charge | QG | nC | VDS = 800V, VGS = 0/15V, ID = 33.3A | 51 | |||
| Gate-Source charge | Qgs | nC | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 5.4 | |||
| Gate-Drain charge | Qgd | nC | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 0.6 | |||
| Turn-on delay time | td(on) | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 13.4 | |||
| Rise time | tr | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 19 | |||
| Turn-off delay time | td(off) | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 2766 | |||
| Fall time | tf | ns | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 5.3 | |||
| Turn-On Switching Energy | EON | J | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 701 | |||
| Turn-Off Switching Energy | EOFF | J | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH | 79 | |||
| Body Diode Characteristic | |||||||
| Body Diode Forward Voltage | VSD | V | VGS=-4V,ISD=20A, TJ=25C | 2.2 | 3 | ||
| Body Diode Forward Voltage | VSD | V | VGS=-4V,ISD=20A, TJ=175C | ||||
| Body Diode Reverse Recovery Time | trr | ns | VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C | 55 | |||
| Body Diode Reverse Recovery Charge | Qrr | nC | VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C | 4.8 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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