Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 25mΩ@4.5V,6A |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 489pF |
| Input Capacitance(Ciss) | 2.1nF |
| Pd - Power Dissipation | 1.4W |
| Gate Charge(Qg) | 17nC@4.5V |
| Description | P-Channel 20V 6A 1.4W Surface Mount SOT-23L |
| Mfr. Part # | HSS2307 |
| Package | SOT-23L |
| Model Number | HSS2307 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 25mΩ@4.5V,6A |
| Gate Threshold Voltage (Vgs(th)) | 700mV | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 489pF | Input Capacitance(Ciss) | 2.1nF |
| Pd - Power Dissipation | 1.4W | Gate Charge(Qg) | 17nC@4.5V |
| Description | P-Channel 20V 6A 1.4W Surface Mount SOT-23L | Mfr. Part # | HSS2307 |
| Package | SOT-23L | Model Number | HSS2307 |
The HSS2307 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is available as a green device. It exhibits excellent Cdv/dt effect decline.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -4 | A | |||
| IDM | Pulsed Drain Current2 | -24 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.9 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 125 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 90 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-6A | 20 | 25 | mΩ | |
| VGS=-2.5V , ID=-5A | 25 | 30 | mΩ | |||
| VGS=-1.8V , ID=-3A | 38 | 45 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.7 | -1.0 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | µA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-6A | 8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-6A | 17 | nC | ||
| Qgs | Gate-Source Charge | 4.3 | nC | |||
| Qgd | Gate-Drain Charge | 4.3 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-3A | 23 | ns | ||
| tr | Rise Time | 31 | ns | |||
| td(off) | Turn-Off Delay Time | 70 | ns | |||
| tf | Fall Time | 50 | ns | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 2100 | pF | ||
| Coss | Output Capacitance | 489 | pF | |||
| Crss | Reverse Transfer Capacitance | 304 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -6 | A | ||
| ISM | Pulsed Source Current2,4 | -24 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS2307 | SOT-23L | 3000/Tape&Reel | ||||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 The power dissipation is limited by 150 junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!