Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+175℃ |
| RDS(on) | 90mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Pd - Power Dissipation | 136W |
| Output Capacitance(Coss) | 58pF |
| Input Capacitance(Ciss) | 1.39nF |
| Gate Charge(Qg) | 53nC |
| Description | 1.2kV 32A 90mΩ 3.6V 136W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | DMWS120H100SM4-HXY |
| Package | TO-247-4L |
| Model Number | DMWS120H100SM4-HXY |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+175℃ | RDS(on) | 90mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Pd - Power Dissipation | 136W | Output Capacitance(Coss) | 58pF |
| Input Capacitance(Ciss) | 1.39nF | Gate Charge(Qg) | 53nC |
| Description | 1.2kV 32A 90mΩ 3.6V 136W TO-247-4L Single FETs, MOSFETs RoHS | Mfr. Part # | DMWS120H100SM4-HXY |
| Package | TO-247-4L | Model Number | DMWS120H100SM4-HXY |
This 3rd generation SiC Power MOSFET, the DMWS120H100SM4 from HUAXUANYANG ELECTRONICS CO.,LTD, offers high performance with a 1200V drain-source voltage and low on-resistance. It features high-speed switching capabilities, a fast intrinsic diode with low reverse recovery, and an optimized package with a separate driver source pin for improved system efficiency and power density. Applications include renewable energy systems, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.
| Parameter | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|
| Drain - Source Voltage (VDSmax) | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate - Source Voltage (VGSmax, dynamic) | -8/+19 | V | AC (f >1 Hz) | Note: 1 |
| Gate - Source Voltage (VGSop, static) | -4/+15 | V | Static | Note: 2 |
| Continuous Drain Current (ID) | 32 | A | VGS = 15 V, TC = 25C | Fig. 19 |
| Pulsed Drain Current (ID(pulse)) | 80 | A | Pulse width tP limited by Tjmax | Fig. 22 |
| Power Dissipation (PD) | 136 | W | TC=25C, TJ = 175 C | Fig. 20 |
| Operating Junction and Storage Temperature (TJ, Tstg) | -40 to +175 | C | ||
| Solder Temperature (TL) | 260 | C | 1.6mm (0.063) from case for 10s | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate Threshold Voltage (VGS(th)) | 1.8 / 2.5 / 3.6 | V | VDS = VGS, ID = 5 mA | Fig. 11 |
| Zero Gate Voltage Drain Current (IDSS) | 1 / 50 | A | VDS = 1200 V, VGS = 0 V | |
| Gate-Source Leakage Current (IGSS) | 10 / 250 | nA | VGS = 15 V, VDS = 0 V | |
| Drain-Source On-State Resistance (RDS(on)) | 75 / 90 | m | VGS = 15 V, ID = 20 A | Fig. 4, 5, 6 |
| Transconductance (gfs) | 12 / 13 | S | VDS= 20 V, IDS= 20 A | Fig. 7 |
| Input Capacitance (Ciss) | 1390 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Output Capacitance (Coss) | 58 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Reverse Transfer Capacitance (Crss) | 2 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Stored Energy (Eoss) | 33 | J | Fig. 16 | |
| Turn-On Switching Energy (EON) | 270 | J | VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0 , L= 156 H, TJ = 150C | Fig. 26, 29 |
| Turn-Off Switching Energy (EOFF) | 77 | J | VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0 , L= 156 H, TJ = 150C | Fig. 26, 29 |
| Turn-On Delay Time (td(on)) | 30 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Rise Time (tr) | 14 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Turn-Off Delay Time (td(off)) | 38 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Fall Time (tf) | 10 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Internal Gate Resistance (RG(int)) | 9.0 | f = 1 MHz, VAC = 25 mV | ||
| Gate to Source Charge (Qgs) | 17 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Gate to Drain Charge (Qgd) | 18 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Total Gate Charge (Qg) | 53 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Diode Forward Voltage (VSD) | 4.5 / 4.0 | V | VGS = -4 V, ISD = 10 A | Fig. 8, 9, 10 |
| Continuous Diode Forward Current (IS) | 26 | A | VGS = -4 V, TJ = 25 C | Note 1 |
| Diode pulse Current (IS, pulse) | 80 | A | VGS = -4 V, pulse width tP limited by Tjmax | Note 1 |
| Reverse Recover time (trr) | 20 | ns | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Reverse Recovery Charge (Qrr) | 254 | nC | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Peak Reverse Recovery Current (Irrm) | 18 | A | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Thermal Resistance Junction to Case (RJC) | 1.1 | C/W | Fig. 21 | |
| Thermal Resistance Junction to Ambient (RJA) | 40 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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