Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 65V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 6mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.687nF |
| Pd - Power Dissipation | 183W |
| Gate Charge(Qg) | 76.3nC@10V |
| Description | 65V 150A 6mΩ@4.5V 3V@250uA 1 N-channel 183W TO-252-2 Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG035N06LS1D |
| Package | TO-252-2 |
| Model Number | HYG035N06LS1D |
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Product Specification
| Drain to Source Voltage | 65V | Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 6mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.687nF | Pd - Power Dissipation | 183W |
| Gate Charge(Qg) | 76.3nC@10V | Description | 65V 150A 6mΩ@4.5V 3V@250uA 1 N-channel 183W TO-252-2 Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG035N06LS1D | Package | TO-252-2 |
| Model Number | HYG035N06LS1D |
The HYG035N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features high current capability (150A continuous), low on-resistance (3.5 m typ. at VGS=10V), and is 100% avalanche tested for reliability. This device is suitable for load switching and motor drives in electric tools.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25Unless Otherwise Noted | - | - | 65 | V |
| Gate-Source Voltage | VGSS | - | - | +20/-12 | - | V |
| Junction Temperature Range | TJ | - | -55 | - | 175 | |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | |
| Source Current-Continuous(Body Diode) | IS | Tc=25, Mounted on Large Heat Sink | - | - | 150 | A |
| Pulsed Drain Current | IDM | Tc=25 | - | - | 410 | A |
| Continuous Drain Current | ID | Tc=25 | - | - | 150 | A |
| Continuous Drain Current | ID | Tc=100 | - | - | 107 | A |
| Maximum Power Dissipation | PD | Tc=25 | - | - | 183 | W |
| Maximum Power Dissipation | PD | Tc=100 | - | - | 91.5 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.82 | - | /W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | - | 60.0 | - | /W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, starting TJ=25, VGS=10V | - | 209 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 65 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=65V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125, VDS=65V,VGS=0V | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.5 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=+20V/-12V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 3.5 | 4.0 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 5.3 | 6.0 | m |
| Diode Forward Voltage | VSD* | ISD=20A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=10A,dISD/dt=100A/s | - | 42 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=10A,dISD/dt=100A/s | - | 35 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.8 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3687 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1610 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 112 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 15 | - | ns |
| Turn-on Rise Time | Tr | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 29 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 92 | - | ns |
| Turn-off Fall Time | Tf | VDD=30V,RG=6, IDS=10A,VGS=10V | - | 95 | - | ns |
| Total Gate Charge | Qg | VDS =48V, VGS=10V, ID=20A | - | 76.3 | - | nC |
| Total Gate Charge | Qg | VDS =48V, VGS=4.5V, ID=20A | - | 41.7 | - | nC |
| Gate-Source Charge | Qgs | VDS =48V, VGS=10V, ID=20A | - | 11.0 | - | nC |
| Gate-Drain Charge | Qgd | VDS =48V, VGS=10V, ID=20A | - | 23.0 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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