Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 2.5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.1V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 230W |
| Input Capacitance(Ciss) | 7.236nF |
| Gate Charge(Qg) | 112nC@10V |
| Description | 60V 210A 2.5mΩ@10V 2.1V@250uA 1 N-channel 230W TO-220FB-3L Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG020N06LS1P |
| Package | TO-220FB-3L |
| Model Number | HYG020N06LS1P |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 2.5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.1V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | Number | 1 N-channel |
| Pd - Power Dissipation | 230W | Input Capacitance(Ciss) | 7.236nF |
| Gate Charge(Qg) | 112nC@10V | Description | 60V 210A 2.5mΩ@10V 2.1V@250uA 1 N-channel 230W TO-220FB-3L Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG020N06LS1P | Package | TO-220FB-3L |
| Model Number | HYG020N06LS1P |
The HYG020N06LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance (RDS(ON)=2m typ. @ VGS = 10V), 100% avalanche tested, and offers a reliable and rugged design. This device is available in lead-free (RoHS compliant) and green (lead-free and halogen-free) options.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous(Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 210 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 820 | A | ||
| Continuous Drain Current | ID | Tc=25C | 210 | A | ||
| Continuous Drain Current | ID | Tc=100C | 94 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 230 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 115 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.65 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | 62.5 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C, VDS=48V., VGS=10V. | 795 | mJ | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 60 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=100C | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 2.1 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V,IDS=50A | 2 | 2.5 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=50A,VGS=0V | 0.84 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | 53.6 | - | ns | |
| Reverse Recovery Charge | Qrr | 77.6 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 0.6 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | 7236 | - | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1MHz | 1736 | - | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1MHz | 37 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 19.8 | - | ns | |
| Turn-on Rise Time | Tr | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 68.7 | - | ns | |
| Turn-off Delay Time | td(OFF) | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 55.6 | - | ns | |
| Turn-off Fall Time | Tf | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 86 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg10V | VDS =48V, VGS=10V, ID=50A | 112 | - | nC | |
| Gate-Source Charge | Qgs | VDS =48V, VGS=10V, ID=50A | 30 | - | nC | |
| Gate-Drain Charge | Qgd | VDS =48V, VGS=10V, ID=50A | 19 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!