Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 6.2mΩ@4.5V,20A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 649pF |
| Input Capacitance(Ciss) | 7.66nF |
| Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 131.3nC@10V |
| Description | P-Channel 30V 80A 62.5W Surface Mount PPAK-8(5x6) |
| Mfr. Part # | HYG045P03LQ1C2 |
| Package | PPAK-8(5x6) |
| Model Number | HYG045P03LQ1C2 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 6.2mΩ@4.5V,20A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 649pF | Input Capacitance(Ciss) | 7.66nF |
| Pd - Power Dissipation | 62.5W | Gate Charge(Qg) | 131.3nC@10V |
| Description | P-Channel 30V 80A 62.5W Surface Mount PPAK-8(5x6) | Mfr. Part # | HYG045P03LQ1C2 |
| Package | PPAK-8(5x6) | Model Number | HYG045P03LQ1C2 |
The HYG045P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 3.8 m (typ.) at VGS = -10V and 6.2 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | -30 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | -80 | A | ||
| Pulsed Drain Current | IDM | Tc=25C * | -320 | A | ||
| Continuous Drain Current | ID | Tc=25C | A | |||
| Continuous Drain Current | ID | Tc=100C | A | |||
| Maximum Power Dissipation | PD | Tc=25C | 62.5 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 31.2 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 45 | C/W | ||
| Single Pulsed Avalanche Energy | EAS | *** L=0.1mH | 378.5 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=-30V,VGS=0V | -1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | -50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1 | -1.6 | -3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V,IDS=-20A * | 3.8 | 5.0 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V,IDS=-20A * | 6.2 | 8.5 | m | |
| Diode Forward Voltage | VSD | ISD=-20A,VGS=0V * | -0.82 | -1.2 | V | |
| Reverse Recovery Time | trr | ISD=-20A,dISD/dt=100A/s | 22 | ns | ||
| Reverse Recovery Charge | Qrr | 13.5 | nC | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 5.2 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 7660 | pF | ||
| Output Capacitance | Coss | 649 | pF | |||
| Reverse Transfer Capacitance | Crss | 575 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-15V,RG=4, IDS=-20A,VGS=-10V | 14.6 | ns | ||
| Turn-on Rise Time | Tr | 68.8 | ns | |||
| Turn-off Delay Time | td(OFF) | 162.9 | ns | |||
| Turn-off Fall Time | Tf | 95 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | Vgs=-10V, VDS =-15V,ID=-10A | 131.3 | nC | ||
| Total Gate Charge | Qg | Vgs=-4.5V | 63.6 | nC | ||
| Gate-Source Charge | Qgs | 29.5 | nC | |||
| Gate-Drain Charge | Qgd | 19.1 | nC | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!